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Energy loss rates of two dimensional hole gases in gated Si/Si0.8Ge0.2 heterostructures
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UNSPECIFIED (1999) Energy loss rates of two dimensional hole gases in gated Si/Si0.8Ge0.2 heterostructures. In: 1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy, SEP 13-15, 1998, CASTELVECCHIO PAS, ITALY.
Full text not available from this repository.Abstract
Using high electric field Shubnikov de Haas oscillations (SdH) we have investigated the energy loss rate as a function of carrier temperature of hot holes in the ungated and gated inverted p type modulation doped Si/Si0.8Ge0.2 grown by solid source MBE at lattice temperature of 0.34K. At T-C=0.34 to 1.8K, it is seen that the energy loss rate in such a structure is more than that of a normal structure at the same sheet density, N-h. It is shown that the energy relaxation of the 2DHG is dominated by acoustic phonon scattering via deformation potential coupling.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Journal or Publication Title: | LATTICE MISMATCHED THIN FILMS |
| Publisher: | MINERALS, METALS & MATERIALS SOC |
| ISBN: | 0-87339-444-5 |
| Editor: | Fitzgerald, EA |
| Date: | 1999 |
| Number of Pages: | 6 |
| Page Range: | pp. 33-38 |
| Publication Status: | Published |
| Title of Event: | 1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy |
| Location of Event: | CASTELVECCHIO PAS, ITALY |
| Date(s) of Event: | SEP 13-15, 1998 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/13898 |
Data sourced from Thomson Reuters' Web of Knowledge
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