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Energy loss rates of two dimensional hole gases in gated Si/Si0.8Ge0.2 heterostructures
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UNSPECIFIED (1999) Energy loss rates of two dimensional hole gases in gated Si/Si0.8Ge0.2 heterostructures. In: 1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy, CASTELVECCHIO PAS, ITALY, SEP 13-15, 1998. Published in: LATTICE MISMATCHED THIN FILMS pp. 33-38. ISBN 0-87339-444-5.
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Abstract
Using high electric field Shubnikov de Haas oscillations (SdH) we have investigated the energy loss rate as a function of carrier temperature of hot holes in the ungated and gated inverted p type modulation doped Si/Si0.8Ge0.2 grown by solid source MBE at lattice temperature of 0.34K. At T-C=0.34 to 1.8K, it is seen that the energy loss rate in such a structure is more than that of a normal structure at the same sheet density, N-h. It is shown that the energy relaxation of the 2DHG is dominated by acoustic phonon scattering via deformation potential coupling.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) | ||||
Journal or Publication Title: | LATTICE MISMATCHED THIN FILMS | ||||
Publisher: | MINERALS, METALS & MATERIALS SOC | ||||
ISBN: | 0-87339-444-5 | ||||
Editor: | Fitzgerald, EA | ||||
Official Date: | 1999 | ||||
Dates: |
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Number of Pages: | 6 | ||||
Page Range: | pp. 33-38 | ||||
Publication Status: | Published | ||||
Title of Event: | 1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy | ||||
Location of Event: | CASTELVECCHIO PAS, ITALY | ||||
Date(s) of Event: | SEP 13-15, 1998 |
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