Energy loss rates of two dimensional hole gases in gated Si/Si0.8Ge0.2 heterostructures
UNSPECIFIED (1999) Energy loss rates of two dimensional hole gases in gated Si/Si0.8Ge0.2 heterostructures. In: 1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy, SEP 13-15, 1998, CASTELVECCHIO PAS, ITALY.Full text not available from this repository.
Using high electric field Shubnikov de Haas oscillations (SdH) we have investigated the energy loss rate as a function of carrier temperature of hot holes in the ungated and gated inverted p type modulation doped Si/Si0.8Ge0.2 grown by solid source MBE at lattice temperature of 0.34K. At T-C=0.34 to 1.8K, it is seen that the energy loss rate in such a structure is more than that of a normal structure at the same sheet density, N-h. It is shown that the energy relaxation of the 2DHG is dominated by acoustic phonon scattering via deformation potential coupling.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)|
|Journal or Publication Title:||LATTICE MISMATCHED THIN FILMS|
|Publisher:||MINERALS, METALS & MATERIALS SOC|
|Number of Pages:||6|
|Page Range:||pp. 33-38|
|Title of Event:||1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy|
|Location of Event:||CASTELVECCHIO PAS, ITALY|
|Date(s) of Event:||SEP 13-15, 1998|
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