Hiller, Daniel, Markevich, Vladimir P., de Guzman, Joyce Ann T., König, Dirk, Prucnal, Slawomir, Bock, Wolfgang, Julin, Jaakko, Peaker, Anthony R., Macdonald, Daniel, Grant, Nicholas E. and Murphy, John D. (2020) Kinetics of bulk lifetime degradation in Float‐Zone (FZ) silicon : fast activation and annihilation of grown‐in defects and the role of hydrogen vs light. Physica Status Solidi (a) . doi:10.1002/pssa.202000436 (In Press)

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Abstract

Float‐zone (FZ) silicon often has grown‐in defects that are thermally activated in a broad temperature window of ∽300–800°C. These defects cause efficient electron‐hole pair recombination, which deteriorates the bulk minority carrier lifetime and thereby possible photovoltaic conversion efficiencies. Little is known so far about these defects which are possibly Si‐vacancy/nitrogen‐related (VxNy). Here it is shown that the defect activation takes place on sub‐second timescales, as does the destruction of the defects at higher temperatures. Complete defect annihilation, however, is not achieved until nitrogen impurities are effused from the wafer, as confirmed by secondary ion mass spectrometry. Hydrogenation experiments reveal the temporary and only partial passivation of recombination centers. In combination with deep‐level transient spectroscopy, at least two possible defect states are revealed, only one of which interacts with H. With the help of density functional theory V1N1‐centers, which induce Si dangling bonds (DBs), are proposed as one possible defect candidate. Such DBs can be passivated by H. The associated formation energy, as well as their sensitivity to light‐induced free carriers, is consistent with the experimental results. These results are anticipated to contribute to a deeper understanding of bulk‐Si defects, which are pivotal for the mitigation of solar cell degradation processes.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH):	Photovoltaic power generation, Crystal growth, Silicon, Materials -- Deterioration
Journal or Publication Title:	Physica Status Solidi (a)
Publisher:	Wiley - VCH Verlag GmbH & Co. KGaA
ISSN:	0031-8965
Official Date:	28 July 2020
Dates:	Date Event 28 July 2020 Available 24 July 2020 Accepted
Date of first compliant deposit:	3 August 2020
DOI:	10.1002/pssa.202000436
Status:	Peer Reviewed
Publication Status:	In Press
Publisher Statement:	This is the peer reviewed version of the following article: Hiller, D., Markevich, V.P., de Guzman, J.A.T., König, D., Prucnal, S., Bock, W., Julin, J., Peaker, A.R., Macdonald, D., Grant, N.E. and Murphy, J.D. (2020), Kinetics of Bulk Lifetime Degradation in Float‐Zone (FZ) Silicon: Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen vs Light. Phys. Status Solidi A., which has been published in final form at http://dx.doi.org/10.1002/pssa.202000436. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Access rights to Published version:	Restricted or Subscription Access
RIOXX Funder/Project Grant:	Project/Grant ID RIOXX Funder Name Funder ID UNSPECIFIED Australian Centre for Advanced Photovoltaics http://dx.doi.org/10.13039/100012030 EP/M024911/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/TO25131/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 UNSPECIFIED Blue Sky Research UNSPECIFIED UNSPECIFIED Theodore-von-Kàrmàn Fellowship UNSPECIFIED EP/M024911/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266

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