Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Kinetics of bulk lifetime degradation in Float‐Zone (FZ) silicon : fast activation and annihilation of grown‐in defects and the role of hydrogen vs light

Tools
- Tools
+ Tools

Hiller, Daniel, Markevich, Vladimir P., de Guzman, Joyce Ann T., König, Dirk, Prucnal, Slawomir, Bock, Wolfgang, Julin, Jaakko, Peaker, Anthony R., Macdonald, Daniel, Grant, Nicholas E. and Murphy, John D. (2020) Kinetics of bulk lifetime degradation in Float‐Zone (FZ) silicon : fast activation and annihilation of grown‐in defects and the role of hydrogen vs light. Physica Status Solidi (a), 217 (17). 2000436. doi:10.1002/pssa.202000436 ISSN 0031-8965.

[img]
Preview
PDF
WRAP-kinetics-bulk-lifetime-degradation-Float‐Zone-FZ-silicon-Murphy-2020.pdf - Accepted Version - Requires a PDF viewer.

Download (1662Kb) | Preview
Official URL: http://dx.doi.org/10.1002/pssa.202000436

Request Changes to record.

Abstract

Float‐zone (FZ) silicon often has grown‐in defects that are thermally activated in a broad temperature window of ∽300–800°C. These defects cause efficient electron‐hole pair recombination, which deteriorates the bulk minority carrier lifetime and thereby possible photovoltaic conversion efficiencies. Little is known so far about these defects which are possibly Si‐vacancy/nitrogen‐related (VxNy). Here it is shown that the defect activation takes place on sub‐second timescales, as does the destruction of the defects at higher temperatures. Complete defect annihilation, however, is not achieved until nitrogen impurities are effused from the wafer, as confirmed by secondary ion mass spectrometry. Hydrogenation experiments reveal the temporary and only partial passivation of recombination centers. In combination with deep‐level transient spectroscopy, at least two possible defect states are revealed, only one of which interacts with H. With the help of density functional theory V1N1‐centers, which induce Si dangling bonds (DBs), are proposed as one possible defect candidate. Such DBs can be passivated by H. The associated formation energy, as well as their sensitivity to light‐induced free carriers, is consistent with the experimental results. These results are anticipated to contribute to a deeper understanding of bulk‐Si defects, which are pivotal for the mitigation of solar cell degradation processes.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Photovoltaic power generation, Crystal growth, Silicon, Materials -- Deterioration
Journal or Publication Title: Physica Status Solidi (a)
Publisher: Wiley-Blackwell
ISSN: 0031-8965
Official Date: September 2020
Dates:
DateEvent
September 2020Published
28 July 2020Available
24 July 2020Accepted
Volume: 217
Number: 17
Article Number: 2000436
DOI: 10.1002/pssa.202000436
Status: Peer Reviewed
Publication Status: Published
Reuse Statement (publisher, data, author rights): This is the peer reviewed version of the following article: Hiller, D., Markevich, V.P., de Guzman, J.A.T., König, D., Prucnal, S., Bock, W., Julin, J., Peaker, A.R., Macdonald, D., Grant, N.E. and Murphy, J.D. (2020), Kinetics of Bulk Lifetime Degradation in Float‐Zone (FZ) Silicon: Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen vs Light. Phys. Status Solidi A., which has been published in final form at http://dx.doi.org/10.1002/pssa.202000436. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 3 August 2020
Date of first compliant Open Access: 28 July 2021
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
UNSPECIFIEDAustralian Centre for Advanced Photovoltaicshttp://dx.doi.org/10.13039/100012030
EP/M024911/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/TO25131/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
UNSPECIFIEDBlue Sky ResearchUNSPECIFIED
UNSPECIFIEDTheodore-von-Kàrmàn FellowshipUNSPECIFIED
EP/M024911/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us