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Impact of BTI induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs

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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2021) Impact of BTI induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs. IEEE Transactions on Power Electronics, 36 (3). pp. 3279-3291. doi:10.1109/TPEL.2020.3012298 ISSN 0885-8993.

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Official URL: http://dx.doi.org/10.1109/TPEL.2020.3012298

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Abstract

In this paper a method for evaluating the implications of threshold voltage (VTH) drift from gate voltage stress in SiC MOSFETs is presented. By exploiting the Miller coupling between two devices in the same phase leg, the technique uses the shoot-through charge from parasitic turn-ON to characterize the impact of Bias Temperature Instability (BTI) induced VTH shift. Traditional methods of BTI characterization rely on the application of a stress voltage without characterizing the implication of the VTH shift on the switching characteristics of the device in a circuit. Unlike conventional methods, this method uses the actual converter environment to investigate the implications of VTH shift and should therefore be of more interest to applications engineers as opposed to device physicists. Furthermore, a common problem is the underestimation of the VTH shift since recovery from charge de-trapping can mask the true extent of the problem. The impact of temperature, the recovery time after stress removal and polarity of the stress have been studied for a set of commercially available SiC MOSFETs.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors , Silicon carbide -- Electric properties
Journal or Publication Title: IEEE Transactions on Power Electronics
Publisher: IEEE
ISSN: 0885-8993
Official Date: March 2021
Dates:
DateEvent
March 2021Published
28 July 2020Available
13 July 2020Accepted
Volume: 36
Number: 3
Page Range: pp. 3279-3291
DOI: 10.1109/TPEL.2020.3012298
Status: Peer Reviewed
Publication Status: Published
Reuse Statement (publisher, data, author rights): © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 5 August 2020
Date of first compliant Open Access: 6 August 2020
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R004366/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

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