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Impact of BTI induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs
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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2021) Impact of BTI induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs. IEEE Transactions on Power Electronics, 36 (3). pp. 3279-3291. doi:10.1109/TPEL.2020.3012298 ISSN 0885-8993.
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WRAP-impact-BTI-induced-threshold-voltage-shifts-shoot-through-currents-crosstalk-SiC-MOSFET-Ortiz-Gonzalez-2020.pdf - Accepted Version - Requires a PDF viewer. Download (2907Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/TPEL.2020.3012298
Abstract
In this paper a method for evaluating the implications of threshold voltage (VTH) drift from gate voltage stress in SiC MOSFETs is presented. By exploiting the Miller coupling between two devices in the same phase leg, the technique uses the shoot-through charge from parasitic turn-ON to characterize the impact of Bias Temperature Instability (BTI) induced VTH shift. Traditional methods of BTI characterization rely on the application of a stress voltage without characterizing the implication of the VTH shift on the switching characteristics of the device in a circuit. Unlike conventional methods, this method uses the actual converter environment to investigate the implications of VTH shift and should therefore be of more interest to applications engineers as opposed to device physicists. Furthermore, a common problem is the underestimation of the VTH shift since recovery from charge de-trapping can mask the true extent of the problem. The impact of temperature, the recovery time after stress removal and polarity of the stress have been studied for a set of commercially available SiC MOSFETs.
| Item Type: | Journal Article | ||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors , Silicon carbide -- Electric properties | ||||||||
| Journal or Publication Title: | IEEE Transactions on Power Electronics | ||||||||
| Publisher: | IEEE | ||||||||
| ISSN: | 0885-8993 | ||||||||
| Official Date: | March 2021 | ||||||||
| Dates: |
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| Volume: | 36 | ||||||||
| Number: | 3 | ||||||||
| Page Range: | pp. 3279-3291 | ||||||||
| DOI: | 10.1109/TPEL.2020.3012298 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Reuse Statement (publisher, data, author rights): | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 5 August 2020 | ||||||||
| Date of first compliant Open Access: | 6 August 2020 | ||||||||
| RIOXX Funder/Project Grant: |
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