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Non-intrusive methodologies for characterization of bias temperature instability in SiC power MOSFETs
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Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2020) Non-intrusive methodologies for characterization of bias temperature instability in SiC power MOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 28 Apr -30 May 2020 ISBN 9781728131993. doi:10.1109/IRPS45951.2020.9129637
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WRAP-non-intrusive-methodologies-characterization-bias-temperature-instability-SiC-power-MOSFETs-Ortiz-Gonzalez-2020.pdf - Accepted Version - Requires a PDF viewer. Download (2014Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/IRPS45951.2020.9129637
Abstract
The gate oxide reliability of SiC power MOSFETs remains a challenge, despite the improvements of the new generation power devices. The threshold voltage drift caused by Bias Temperature Instability (BTI) has been subject of different studies and methods have been proposed to evaluate the real magnitude of the threshold voltage shift. These methodologies usually focus on the characterization of the threshold voltage shift, rather than its implications to the operation or how the threshold voltage shift can be detected during the application. This paper presents two non-intrusive methodologies which can assess and determine the impact of BTI-induced. The proposed methodologies are able to capture the peak shift and subsequent recovery after stress removal.
| Item Type: | Conference Item (Paper) | ||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors , Silicon carbide -- Thermal properties | ||||||||
| Publisher: | IEEE | ||||||||
| ISBN: | 9781728131993 | ||||||||
| Book Title: | 2020 IEEE International Reliability Physics Symposium (IRPS) | ||||||||
| Official Date: | 30 June 2020 | ||||||||
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| DOI: | 10.1109/IRPS45951.2020.9129637 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Reuse Statement (publisher, data, author rights): | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 25 August 2020 | ||||||||
| Date of first compliant Open Access: | 25 August 2020 | ||||||||
| RIOXX Funder/Project Grant: |
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| Conference Paper Type: | Paper | ||||||||
| Title of Event: | 2020 IEEE International Reliability Physics Symposium (IRPS) | ||||||||
| Type of Event: | Conference | ||||||||
| Location of Event: | Dallas, TX, USA | ||||||||
| Date(s) of Event: | 28 Apr -30 May 2020 |
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