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Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma
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UNSPECIFIED (1999) Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 32 (19). pp. 2478-2482. ISSN 0022-3727
Full text not available from this repository.Abstract
The reaction of Si (100) surfaces at T = 950 degrees C with radicals of methane obtained in a low-power-density glow discharge plasma, has been studied by combining in situ surface science techniques (x-ray photoemission spectroscopy and high electron energy diffraction) and ex situ analytical techniques (atomic force microscopy and infrared absorption). An analysis of C 1s and Si 2p core-level shifts combined with the examination of the valence-band curves showed that the obtained buffer layers were stoichiometric. For long carbonization times (>30 min) the formation of a carbon rich surface was observed. To understand the mechanism of hetero-epitaxial silicon carbide (SiC) buffer layer growth, the early stage of SiC nucleation was observed by atomic force microscopy and reflection high-energy electron diffraction. The results suggest that three-dimensional epitaxial islands nucleate at the earliest growth stage followed by a further Volmer-Weber growth until the formation of a carbon rich surface. The growth mechanism of the SiC buffer layer is discussed on the basis of a reported model.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | JOURNAL OF PHYSICS D-APPLIED PHYSICS |
| Publisher: | IOP PUBLISHING LTD |
| ISSN: | 0022-3727 |
| Date: | 7 October 1999 |
| Volume: | 32 |
| Number: | 19 |
| Number of Pages: | 5 |
| Page Range: | pp. 2478-2482 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/14102 |
Data sourced from Thomson Reuters' Web of Knowledge
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