UNSPECIFIED (1999) Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 32 (19). pp. 2478-2482. ISSN 0022-3727.

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Abstract

The reaction of Si (100) surfaces at T = 950 degrees C with radicals of methane obtained in a low-power-density glow discharge plasma, has been studied by combining in situ surface science techniques (x-ray photoemission spectroscopy and high electron energy diffraction) and ex situ analytical techniques (atomic force microscopy and infrared absorption). An analysis of C 1s and Si 2p core-level shifts combined with the examination of the valence-band curves showed that the obtained buffer layers were stoichiometric. For long carbonization times (>30 min) the formation of a carbon rich surface was observed. To understand the mechanism of hetero-epitaxial silicon carbide (SiC) buffer layer growth, the early stage of SiC nucleation was observed by atomic force microscopy and reflection high-energy electron diffraction. The results suggest that three-dimensional epitaxial islands nucleate at the earliest growth stage followed by a further Volmer-Weber growth until the formation of a carbon rich surface. The growth mechanism of the SiC buffer layer is discussed on the basis of a reported model.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF PHYSICS D-APPLIED PHYSICS
Publisher:	IOP PUBLISHING LTD
ISSN:	0022-3727
Official Date:	7 October 1999
Dates:	Date Event 7 October 1999 UNSPECIFIED
Volume:	32
Number:	19
Number of Pages:	5
Page Range:	pp. 2478-2482
Publication Status:	Published

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