Study of altered layer formation in O-2(+)-bombarded SiGe alloys using a novel crossed bevel technique
UNSPECIFIED (1999) Study of altered layer formation in O-2(+)-bombarded SiGe alloys using a novel crossed bevel technique. SURFACE AND INTERFACE ANALYSIS, 27 (9). pp. 840-848. ISSN 0142-2421Full text not available from this repository.
A novel 'crossed bevel' technique has been used for the investigation of the evolution of the altered layer that forms in a SiGe alloy under 8 keV O-2(+) ion bombardment. Auger microscopy (MULSAM instrument) and low-energy ion beam bevelling (500 eV O-2(+)) Here used to composition-depth profile a high-energy (8 keV O-2(+)) bevel that contained the complete history of the altered layer. The sample was transferred in vacuo from the bevelling instrument to the Anger microscope, The formation of a Ge-rich layer 15 nm below the altered layer surface, with an associated near-surface Ge depletion, was observed, consistent with previous measurements. The growth of a surface oxygen implant was also seen, The importance of the development of this technique is that it will enable the powerful multispectral chemometric capability of the MULSAM instrument to be applied to altered layer redistribution in the future. Copyright (C) 1999 John Wiley & Sons, Ltd.
|Item Type:||Journal Article|
|Subjects:||Q Science > QD Chemistry|
|Journal or Publication Title:||SURFACE AND INTERFACE ANALYSIS|
|Publisher:||JOHN WILEY & SONS LTD|
|Number of Pages:||11|
|Page Range:||pp. 840-848|
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