The Library
Electrical characterization of thermally activated defects in n-type float-zone silicon
Tools
Tools
Tools
Zhu, Yan, Rougieux, Fiacre, Grant, Nicholas E., de Guzman, Joyce Ann T., Murphy, John D., Markevich, Vladimir P., Coletti, Gianluca, Peaker, Anthony R. and Hameiri, Ziv (2021) Electrical characterization of thermally activated defects in n-type float-zone silicon. IEEE Journal of Photovoltaics, 11 (1). pp. 26-35. doi:10.1109/JPHOTOV.2020.3031382
|
PDF
WRAP-Electrical-characterization-thermally-activated-n-type-float-zone-silicon-Grant-2020.pdf - Accepted Version - Requires a PDF viewer. Download (2002Kb) | Preview |
Official URL: https://doi.org/10.1109/JPHOTOV.2020.3031382
Abstract
Float-zone (FZ) silicon is usually assumed to be bulk defect-lean and stable. However, recent studies have revealed that detrimental defects can be thermally activated in FZ silicon wafers and lead to a reduction of carrier lifetime by up to two orders of magnitude. A robust methodology which combines different characterization techniques and passivation schemes is used to provide new insight into the origin of degradation of 1 Ω·cm n-type phosphorus doped FZ silicon (with nitrogen doping during growth) after annealing at 500 °C. Carrier lifetime and photoluminescence experiments are first performed with temporary room temperature surface passivation which minimizes lifetime changes which can occur during passivation processes involving thermal treatments. Temperature- and injection-dependent lifetime spectroscopy is then performed with a more stable passivation scheme, with the same samples finally being studied by deep level transient spectroscopy (DLTS). Although five defect levels are found with DLTS, detailed analysis of injection-dependent lifetime data reveals that the most detrimental defect levels could arise from just two independent single-level defects or from one two-level defect. The defect parameters for these two possible scenarios are extracted and discussed.
| Item Type: | Journal Article | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Alternative Title: | |||||||||||||||||||
| Subjects: | Q Science > QC Physics | ||||||||||||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||||||||
| Library of Congress Subject Headings (LCSH): | Silicon carbide -- Electric properties , Deep level transient spectroscopy , Photovoltaic effect | ||||||||||||||||||
| Journal or Publication Title: | IEEE Journal of Photovoltaics | ||||||||||||||||||
| Publisher: | IEEE | ||||||||||||||||||
| ISSN: | 2156-3381 | ||||||||||||||||||
| Official Date: | January 2021 | ||||||||||||||||||
| Dates: |
|
||||||||||||||||||
| Volume: | 11 | ||||||||||||||||||
| Number: | 1 | ||||||||||||||||||
| Page Range: | pp. 26-35 | ||||||||||||||||||
| DOI: | 10.1109/JPHOTOV.2020.3031382 | ||||||||||||||||||
| Status: | Peer Reviewed | ||||||||||||||||||
| Publication Status: | Published | ||||||||||||||||||
| Reuse Statement (publisher, data, author rights): | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||||||||||||
| Access rights to Published version: | Open Access | ||||||||||||||||||
| RIOXX Funder/Project Grant: |
|
||||||||||||||||||
| Related URLs: |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
