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Trade-offs between gate oxide protection and performance in SiC MOSFETs
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Gonzalez, Jose Ortiz, Wu, Ruizhu and Alatise, Olayiwola M. (2020) Trade-offs between gate oxide protection and performance in SiC MOSFETs. In: 2020 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, USA, 11-15 Oct 2020 pp. 690-697. ISBN 9781728158273. doi:10.1109/ECCE44975.2020.9235843
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Official URL: http://dx.doi.org/10.1109/ECCE44975.2020.9235843
Abstract
The reliability of gate oxides in SiC MOSFETs has come under increased scrutiny due to reduced performance under time dependent dielectric breakdown and increased threshold voltage instability. This paper investigates how 10% gate voltage (V GS ) derating in SiC MOSFETs can be implemented with minimal impact on loss performance. Using experimental measurements and electrothermal simulations of power converters, the trade-off between reduced V GS and conversion loss is investigated. It is shown that 10% V GS de-rating increases the ON-state resistance by 10% and the turn-ON switching energy by 7% average while the turn-OFF switching energy is unaffected. The low temperature sensitivity of the ON-state losses in SiC MOSFETs can be exploited since the rise in junction temperature due to V GS derating is marginal, unlike Si devices where ON-state resistance rises significantly with temperature. The load current and switching frequency influences the effectiveness of V GS derating. It is also shown that reducing the gate drive output impedance can compensate for V GS derating at high switching frequencies, with reduced total loss penalization. This may be important for protecting the gate oxide and enhancing its reliability.
| Item Type: | Conference Item (Paper) | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors , Power electronics , Power semiconductors -- Thermal properties | ||||||
| Publisher: | IEEE | ||||||
| ISBN: | 9781728158273 | ||||||
| Book Title: | 2020 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||||
| Official Date: | 2020 | ||||||
| Dates: |
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| Date of first compliant deposit: | 6 November 2020 | ||||||
| Page Range: | pp. 690-697 | ||||||
| DOI: | 10.1109/ECCE44975.2020.9235843 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Publisher Statement: | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| RIOXX Funder/Project Grant: |
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| Conference Paper Type: | Paper | ||||||
| Title of Event: | 2020 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||||
| Type of Event: | Conference | ||||||
| Location of Event: | Detroit, MI, USA, USA | ||||||
| Date(s) of Event: | 11-15 Oct 2020 |
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