Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Trade-offs between gate oxide protection and performance in SiC MOSFETs

Tools
- Tools
+ Tools

Gonzalez, Jose Ortiz, Wu, Ruizhu and Alatise, Olayiwola M. (2020) Trade-offs between gate oxide protection and performance in SiC MOSFETs. In: 2020 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, USA, 11-15 Oct 2020 pp. 690-697. ISBN 9781728158273. doi:10.1109/ECCE44975.2020.9235843

[img]
Preview
PDF
WRAP-trade-offs-between-gate-oxide-protection-performance-SiC MOSFETs-Ortiz-Gonzalez-2020.pdf - Accepted Version - Requires a PDF viewer.

Download (2286Kb) | Preview
Official URL: http://dx.doi.org/10.1109/ECCE44975.2020.9235843

Request Changes to record.

Abstract

The reliability of gate oxides in SiC MOSFETs has come under increased scrutiny due to reduced performance under time dependent dielectric breakdown and increased threshold voltage instability. This paper investigates how 10% gate voltage (V GS ) derating in SiC MOSFETs can be implemented with minimal impact on loss performance. Using experimental measurements and electrothermal simulations of power converters, the trade-off between reduced V GS and conversion loss is investigated. It is shown that 10% V GS de-rating increases the ON-state resistance by 10% and the turn-ON switching energy by 7% average while the turn-OFF switching energy is unaffected. The low temperature sensitivity of the ON-state losses in SiC MOSFETs can be exploited since the rise in junction temperature due to V GS derating is marginal, unlike Si devices where ON-state resistance rises significantly with temperature. The load current and switching frequency influences the effectiveness of V GS derating. It is also shown that reducing the gate drive output impedance can compensate for V GS derating at high switching frequencies, with reduced total loss penalization. This may be important for protecting the gate oxide and enhancing its reliability.

Item Type: Conference Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors , Power electronics , Power semiconductors -- Thermal properties
Publisher: IEEE
ISBN: 9781728158273
Book Title: 2020 IEEE Energy Conversion Congress and Exposition (ECCE)
Official Date: 2020
Dates:
DateEvent
2020Published
27 August 2020Accepted
Date of first compliant deposit: 6 November 2020
Page Range: pp. 690-697
DOI: 10.1109/ECCE44975.2020.9235843
Status: Peer Reviewed
Publication Status: Published
Publisher Statement: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Access rights to Published version: Restricted or Subscription Access
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R004366/1 [EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
Conference Paper Type: Paper
Title of Event: 2020 IEEE Energy Conversion Congress and Exposition (ECCE)
Type of Event: Conference
Location of Event: Detroit, MI, USA, USA
Date(s) of Event: 11-15 Oct 2020

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us