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Characterizing threshold voltage shifts and recovery in Schottky gate and Ohmic gate GaN HEMTs
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Gonzalez, Jose Ortiz, Etoz, Burhan and Alatise, Olayiwola M. (2020) Characterizing threshold voltage shifts and recovery in Schottky gate and Ohmic gate GaN HEMTs. In: 2020 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, 11-15 Oct 2020 pp. 217-224. ISBN 9781728158266. ISSN 2329-3748. doi:10.1109/ECCE44975.2020.9235650
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WRAP-characterizing-threshold-voltage-shifts-recovery-Schottky-gate-Ohmic-gate-GaN-HEMTs-Ortiz-Gonzalez-2020.pdf - Accepted Version - Requires a PDF viewer. Download (2074Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/ECCE44975.2020.9235650
Abstract
Threshold voltage shift in normally-OFF GaN High Electron Mobility Transistors (HEMTs) is an important reliability concern in GaN devices. Differences in device architecture between Schottky gate and Ohmic gate normally-OFF GaN HEMTs means that there are important differences in the physical mechanism behind threshold voltage shift due to gate stress. In this paper, a non-intrusive technique for the characterization of threshold voltage shift is applied to both technologies. The technique relies on using a sensing current to measure the third quadrant voltage before and after gate-voltage stress. The results show that in Schottky Gate GaN HEMTs, a positive threshold voltage shift occurs at low gate stress voltages due to electron trapping in the GaN/AlGaN interface while at higher gate stress voltages, the threshold voltage shift becomes negative due to hole trapping and accumulation. The stress time has a fundamental role on the measured threshold voltage shift at medium gate voltage levels and pulsed gate stresses are able to capture this phenomenon. For the Ohmic Gate GaN HEMTs, only a negative threshold voltage shift is observed for all stress currents with no apparent shift as the junction temperature is increased.
| Item Type: | Conference Item (Paper) | ||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
| Divisions: | Faculty of Science > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Modulation-doped field-effect transistors, Metal semiconductor field-effect transistors, Metal oxide semiconductor field-effect transistors -- Reliability | ||||||||
| Publisher: | IEEE | ||||||||
| ISBN: | 9781728158266 | ||||||||
| ISSN: | 2329-3748 | ||||||||
| Book Title: | 2020 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||||||
| Official Date: | 2020 | ||||||||
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| Page Range: | pp. 217-224 | ||||||||
| DOI: | 10.1109/ECCE44975.2020.9235650 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Publisher Statement: | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
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| Conference Paper Type: | Paper | ||||||||
| Title of Event: | 2020 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||||||
| Type of Event: | Conference | ||||||||
| Location of Event: | Detroit, MI, USA | ||||||||
| Date(s) of Event: | 11-15 Oct 2020 |
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