Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's
UNSPECIFIED (1999) Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46 (7). pp. 1484-1486. ISSN 0018-9383Full text not available from this repository.
In this brief, we report an investigation of the low frequency noise in p-channel SiGe MOSFET's, At low gate bias the noise spectrum consists of several trap-related generation-recombination (g-r) noise components, At higher gate bias, the noise spectrum is dominated by 1/f noise. The 1/f noise is attributed to a fluctuation in the number of free carriers and the effective slow state trap density at the fermi energy calculated.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||IEEE TRANSACTIONS ON ELECTRON DEVICES|
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Number of Pages:||3|
|Page Range:||pp. 1484-1486|
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