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Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's
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UNSPECIFIED (1999) Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46 (7). pp. 1484-1486. ISSN 0018-9383
Full text not available from this repository.Abstract
In this brief, we report an investigation of the low frequency noise in p-channel SiGe MOSFET's, At low gate bias the noise spectrum consists of several trap-related generation-recombination (g-r) noise components, At higher gate bias, the noise spectrum is dominated by 1/f noise. The 1/f noise is attributed to a fluctuation in the number of free carriers and the effective slow state trap density at the fermi energy calculated.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Journal or Publication Title: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| ISSN: | 0018-9383 |
| Date: | July 1999 |
| Volume: | 46 |
| Number: | 7 |
| Number of Pages: | 3 |
| Page Range: | pp. 1484-1486 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/14414 |
Data sourced from Thomson Reuters' Web of Knowledge
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