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Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's

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UNSPECIFIED (1999) Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46 (7). pp. 1484-1486. ISSN 0018-9383.

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Abstract

In this brief, we report an investigation of the low frequency noise in p-channel SiGe MOSFET's, At low gate bias the noise spectrum consists of several trap-related generation-recombination (g-r) noise components, At higher gate bias, the noise spectrum is dominated by 1/f noise. The 1/f noise is attributed to a fluctuation in the number of free carriers and the effective slow state trap density at the fermi energy calculated.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Journal or Publication Title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
Official Date: July 1999
Dates:
DateEvent
July 1999UNSPECIFIED
Volume: 46
Number: 7
Number of Pages: 3
Page Range: pp. 1484-1486
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

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