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Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's
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UNSPECIFIED (1999) Low frequency noise measurements of p-channel SI(1-x)GE(x) MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46 (7). pp. 1484-1486.
Full text not available from this repository, contact author.Abstract
In this brief, we report an investigation of the low frequency noise in p-channel SiGe MOSFET's, At low gate bias the noise spectrum consists of several trap-related generation-recombination (g-r) noise components, At higher gate bias, the noise spectrum is dominated by 1/f noise. The 1/f noise is attributed to a fluctuation in the number of free carriers and the effective slow state trap density at the fermi energy calculated.
| Item Type: | Journal Article | ||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Journal or Publication Title: | IEEE TRANSACTIONS ON ELECTRON DEVICES | ||||
| Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | ||||
| ISSN: | 0018-9383 | ||||
| Official Date: | July 1999 | ||||
| Dates: |
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| Volume: | 46 | ||||
| Number: | 7 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | pp. 1484-1486 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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