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Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction

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UNSPECIFIED (1999) Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction. PHYSICAL REVIEW B, 59 (20). pp. 13014-13019. ISSN 1098-0121.

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Abstract

A quantitative structural analysis of the system Si(lll)(root 3 X root 3)R30 degrees-B has been performed using photo-electron diffraction in the scanned energy mode. We confirm that the substitutional Sg adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98(+/-0.04) Angstrom, 2.14(+/-0.13) Angstrom,and 2.21(+/-0.12) Angstrom. These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. [S0163-1829(99)05819-1].

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: PHYSICAL REVIEW B
Publisher: AMER PHYSICAL SOC
ISSN: 1098-0121
Official Date: 15 May 1999
Dates:
DateEvent
15 May 1999UNSPECIFIED
Volume: 59
Number: 20
Number of Pages: 6
Page Range: pp. 13014-13019
Publication Status: Published

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