Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction
UNSPECIFIED. (1999) Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction. PHYSICAL REVIEW B, 59 (20). pp. 13014-13019. ISSN 1098-0121Full text not available from this repository.
A quantitative structural analysis of the system Si(lll)(root 3 X root 3)R30 degrees-B has been performed using photo-electron diffraction in the scanned energy mode. We confirm that the substitutional Sg adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98(+/-0.04) Angstrom, 2.14(+/-0.13) Angstrom,and 2.21(+/-0.12) Angstrom. These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. [S0163-1829(99)05819-1].
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW B|
|Publisher:||AMER PHYSICAL SOC|
|Date:||15 May 1999|
|Number of Pages:||6|
|Page Range:||pp. 13014-13019|
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