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Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction
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UNSPECIFIED (1999) Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction. PHYSICAL REVIEW B, 59 (20). pp. 13014-13019.
Full text not available from this repository, contact author.Abstract
A quantitative structural analysis of the system Si(lll)(root 3 X root 3)R30 degrees-B has been performed using photo-electron diffraction in the scanned energy mode. We confirm that the substitutional Sg adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98(+/-0.04) Angstrom, 2.14(+/-0.13) Angstrom,and 2.21(+/-0.12) Angstrom. These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. [S0163-1829(99)05819-1].
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Journal or Publication Title: | PHYSICAL REVIEW B | ||||
| Publisher: | AMER PHYSICAL SOC | ||||
| ISSN: | 1098-0121 | ||||
| Official Date: | 15 May 1999 | ||||
| Dates: |
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| Volume: | 59 | ||||
| Number: | 20 | ||||
| Number of Pages: | 6 | ||||
| Page Range: | pp. 13014-13019 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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