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Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction
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UNSPECIFIED. (1999) Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction. PHYSICAL REVIEW B, 59 (20). pp. 13014-13019. ISSN 1098-0121
Full text not available from this repository.Abstract
A quantitative structural analysis of the system Si(lll)(root 3 X root 3)R30 degrees-B has been performed using photo-electron diffraction in the scanned energy mode. We confirm that the substitutional Sg adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98(+/-0.04) Angstrom, 2.14(+/-0.13) Angstrom,and 2.21(+/-0.12) Angstrom. These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. [S0163-1829(99)05819-1].
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | PHYSICAL REVIEW B |
| Publisher: | AMER PHYSICAL SOC |
| ISSN: | 1098-0121 |
| Date: | 15 May 1999 |
| Volume: | 59 |
| Number: | 20 |
| Number of Pages: | 6 |
| Page Range: | pp. 13014-13019 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/14477 |
Data sourced from Thomson Reuters' Web of Knowledge
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