Low-energy yield spectroscopy measurements applied to determine valence band line-up at interfaces with non-homogeneous overlayers
UNSPECIFIED (1999) Low-energy yield spectroscopy measurements applied to determine valence band line-up at interfaces with non-homogeneous overlayers. JOURNAL OF PHYSICS-CONDENSED MATTER, 11 (18). pp. 3761-3768. ISSN 0953-8984Full text not available from this repository.
The technique of low-energy yield spectroscopy is applied to determine the valence band line-up at heterojunctions in which the overlayer does not cover the substrate. It is shown that by tuning the analysis energy, the contribution made by electrons that traverse the surface in the uncovered regions can be suppressed from the interface spectrum obtained from low-energy yield spectroscopy operating in the constant-final-state mode, thus allowing the determination of the band line-up without ambiguity. The method was applied to the c-Si/c-SiC heterostructure. A value of Delta E-V = 0.78 +/- 0.06 eV was found for the valence band discontinuity.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS-CONDENSED MATTER|
|Publisher:||IOP PUBLISHING LTD|
|Date:||10 May 1999|
|Number of Pages:||8|
|Page Range:||pp. 3761-3768|
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