UNSPECIFIED (1999) The advantages of normal incidence ultra-low energy secondary ion mass spectrometry depth profiling. In: 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis, AUG 31-SEP 04, 1998, BIRMINGHAM, ENGLAND.

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Abstract

Using a boron multi-delta layer structure, we explore the use of ultra-low energy primary ion beams for secondary ion mass spectrometry (SIMS) analysis under various experimental conditions (different primary beam energies, beam incident angles and the use of oxygen flooding during profiling). To characterize the effect of the micro-roughening which occurs at non-normal incidence on the recorded depth profiles, we calculated the full width half maximum (FWHM) of the profiled delta layers and found that the combination of ultra-low energy and normal incidence provides constant and high depth resolution throughout the measured depth range. (C) 1999 Elsevier Science B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	Surface Science
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0169-4332
Date:	April 1999
Volume:	144-45
Number of Pages:	5
Page Range:	pp. 292-296
Publication Status:	Published
Title of Event:	14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis
Location of Event:	BIRMINGHAM, ENGLAND
Date(s) of Event:	AUG 31-SEP 04, 1998
URI:	http://wrap.warwick.ac.uk/id/eprint/14516

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