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Activated and metallic conduction in p -type modulation-doped Ge - Sn devices

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Gul, Y., Myronov, Maksym, Holmes, S. N. and Pepper, M. (2020) Activated and metallic conduction in p -type modulation-doped Ge - Sn devices. Physical Review Applied, 14 (5). 054064. doi:10.1103/physrevapplied.14.054064

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Official URL: https://doi.org/10.1103/PhysRevApplied.14.054064

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Abstract

Ge1−xSnx quantum wells can be incorporated into Si−Ge–based structures with low-carrier effective masses, high mobilities, and the possibility of direct band-gap devices with x ∼ 0.1. However, the electrical properties of p-type Ge1−xSnx devices are dominated by a thermally activated mobility and metallic behavior. At 30 mK the transport measurements indicate localization with a mobility of
380cm2/Vs, which is thermally activated with a temperature-independent carrier density of 4 × 1011cm−2. This weakly disordered system with conductivity, σ ∼ e2/h, where e is the fundamental charge and h is Planck’s constant, is a result of negatively charged “Sn-vacancy” complex states in the barrier layers that act as hole traps. A measured hole effective mass of 0.090 ± 0.005me from the Shubnikov-de Haas effect, where me is the free electron mass shows that the valence band is heavy hole dominated and is similar to p-type
Ge with the compressive strain playing the role of quenching the spin-orbit coupling and shifting the unoccupied light-hole states to higher hole energies. The Ge1−xSnx devices have a high quantum mobility of approximately 36 000 cm2/Vs that is not thermally activated. The ratio of transport-to-quantum mobility of approximately 0.01 in
Ge1−xSnx devices is unusual and points to several competing scattering mechanisms in the different experimental regimes.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science > Physics
SWORD Depositor: Library Publications Router
Library of Congress Subject Headings (LCSH): Quantum scattering , Metal oxide semiconductor field-effect transistors , Germanium
Journal or Publication Title: Physical Review Applied
Publisher: American Physical Society (APS)
ISSN: 2331-7019
Official Date: 24 November 2020
Dates:
DateEvent
24 November 2020Published
3 November 2020Accepted
Volume: 14
Number: 5
Article Number: 054064
DOI: 10.1103/physrevapplied.14.054064
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Copyright Holders: © 2020 American Physical Society
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R029075/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
Related URLs:
  • https://link.aps.org/licenses/aps-defaul...

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