The Library
Experimental and theoretical study of oxygen precipitation and the resulting limitation of silicon solar cell wafers
Tools
Tools
Tools
Schön, J., Niewelt, T., Mu, D., Maus, S., Wolf, A., Murphy, John D. and Schubert, M. C. (2021) Experimental and theoretical study of oxygen precipitation and the resulting limitation of silicon solar cell wafers. IEEE Journal of Photovoltaics, 11 (2). pp. 289-297. doi:10.1109/JPHOTOV.2020.3044353
|
PDF
WRAP-experimental-theoretical-study-oxygen-precipitation-resulting-limitation-silicon-solar-cell-wafers-Murphy-2021.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (2324Kb) | Preview |
|
![[img]](http://wrap.warwick.ac.uk/style/images/fileicons/application_pdf.png) |
PDF
WRAP-Experimental-theoretical-oxygen-precipitation-silicon-solar-cell-Murphy-2020.pdf - Accepted Version Embargoed item. Restricted access to Repository staff only - Requires a PDF viewer. Download (4Mb) |
Official URL: http://dx.doi.org/10.1109/JPHOTOV.2020.3044353
Abstract
Commercial silicon is prone to form silicon oxide precipitates during high-temperature treatments typical for solar cell production. Oxide precipitates can cause severe efficiency degradation in solar cells. We have developed a model describing the nucleation and growth of oxide precipitates that considers silicon self-interstitial defects and surface effects influencing the precipitate growth in ∼150 μm thick wafers during the solar cell processing. This kinetic model is calibrated with experiments that cause a well-defined and strong precipitate growth to give a prediction of the carrier lifetime limitation because of the oxide precipitates. We test the oxide precipitate model with scanning Fourier-transform infrared spectroscopy, selective etching, and lifetime measurements on typical Cz solar cell wafers before and after solar cell processes. Despite the relatively rough saw damaged etched surfaces and the thin wafers, we observe recurring ring patterns in the measurements of interstitial oxygen reductions, oxide precipitate etch pit density, and recombination activity by photoluminescence imaging. The concentration of precipitated oxygen correlates with the recombination activity and with the initial interstitial oxygen concentration. However, we found lifetime measurements to be a more sensitive technique to study oxide precipitates and using these we find smaller precipitates not detected by selective etching are very recombination active too. The measured concentrations of precipitated oxygen and lifetime agree fairly well with the predictions of the model.
| Item Type: | Journal Article | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||||||||||||
| Divisions: | Faculty of Science > Engineering | ||||||||||||||||||
| Library of Congress Subject Headings (LCSH): | Photovoltaic cells , Silicon solar cells, Silicon solar cells -- Performance , Oxygen | ||||||||||||||||||
| Journal or Publication Title: | IEEE Journal of Photovoltaics | ||||||||||||||||||
| Publisher: | IEEE | ||||||||||||||||||
| ISSN: | 2156-3381 | ||||||||||||||||||
| Official Date: | March 2021 | ||||||||||||||||||
| Dates: |
|
||||||||||||||||||
| Date of first compliant deposit: | 10 December 2020 | ||||||||||||||||||
| Volume: | 11 | ||||||||||||||||||
| Number: | 2 | ||||||||||||||||||
| Page Range: | pp. 289-297 | ||||||||||||||||||
| DOI: | 10.1109/JPHOTOV.2020.3044353 | ||||||||||||||||||
| Status: | Peer Reviewed | ||||||||||||||||||
| Publication Status: | Published | ||||||||||||||||||
| Access rights to Published version: | Open Access | ||||||||||||||||||
| RIOXX Funder/Project Grant: |
|
||||||||||||||||||
| Related URLs: |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
