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Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs

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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2020) Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs. IEEE Transactions on Industry Applications . doi:10.1109/TIA.2020.3045120 ISSN 0093-9994.

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Official URL: http://dx.doi.org/10.1109/TIA.2020.3045120

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Abstract

Junction temperature sensing is an integral part of both on-line and off-line condition monitoring where direct access the bare die surface is not available. Given a defined power input, the junction temperature enables the estimation of the junction-to-case thermal resistance, which is a key indicator of packaging failure mechanisms like solder voiding and cracks. The use of temperature sensitive electrical parameters has widely been proposed as a means of junction temperature sensing however, there are certain challenges regarding their use in SiC MOSFETs. Bias Temperature Instability from charge trapping in the gate dielectric causes threshold voltage drift, which in SiC affects some of the key temperature sensitive electrical parameters including ON-state resistance, body diode forward voltage as well as the current commutation rate. This paper reviews the impact of bias temperature instability on the accurate junction temperature measurement using temperature sensitive electrical parameters in SiC MOSFETs.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors, Metal oxide semiconductor field-effect transistors -- Electric properties, Metal oxide semiconductor field-effect transistors -- Reliability, Silicon carbide -- Thermal properties
Journal or Publication Title: IEEE Transactions on Industry Applications
Publisher: IEEE
ISSN: 0093-9994
Official Date: 15 December 2020
Dates:
DateEvent
15 December 2020Published
8 December 2020Accepted
DOI: 10.1109/TIA.2020.3045120
Status: Peer Reviewed
Publication Status: Published
Reuse Statement (publisher, data, author rights): © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 17 December 2020
Date of first compliant Open Access: 18 December 2020
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R004366/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

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