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Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs
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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2020) Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs. IEEE Transactions on Industry Applications . doi:10.1109/TIA.2020.3045120 ISSN 0093-9994.
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WRAP-bias-temperature-instability-junction-temperature-measurement-using-electrical-parameters-SiC-power-MOSFETs-Ortiz-Gonzalez-2020.pdf - Accepted Version - Requires a PDF viewer. Download (3771Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/TIA.2020.3045120
Abstract
Junction temperature sensing is an integral part of both on-line and off-line condition monitoring where direct access the bare die surface is not available. Given a defined power input, the junction temperature enables the estimation of the junction-to-case thermal resistance, which is a key indicator of packaging failure mechanisms like solder voiding and cracks. The use of temperature sensitive electrical parameters has widely been proposed as a means of junction temperature sensing however, there are certain challenges regarding their use in SiC MOSFETs. Bias Temperature Instability from charge trapping in the gate dielectric causes threshold voltage drift, which in SiC affects some of the key temperature sensitive electrical parameters including ON-state resistance, body diode forward voltage as well as the current commutation rate. This paper reviews the impact of bias temperature instability on the accurate junction temperature measurement using temperature sensitive electrical parameters in SiC MOSFETs.
| Item Type: | Journal Article | ||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Metal oxide semiconductor field-effect transistors -- Electric properties, Metal oxide semiconductor field-effect transistors -- Reliability, Silicon carbide -- Thermal properties | ||||||
| Journal or Publication Title: | IEEE Transactions on Industry Applications | ||||||
| Publisher: | IEEE | ||||||
| ISSN: | 0093-9994 | ||||||
| Official Date: | 15 December 2020 | ||||||
| Dates: |
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| DOI: | 10.1109/TIA.2020.3045120 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Reuse Statement (publisher, data, author rights): | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Date of first compliant deposit: | 17 December 2020 | ||||||
| Date of first compliant Open Access: | 18 December 2020 | ||||||
| RIOXX Funder/Project Grant: |
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