Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

Tools
- Tools
+ Tools

Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527

[img]
Preview
PDF
WRAP-improvement-atomic-layer-deposited-SiO2-4H-SiC-interfaces-high-temperature-forming-gas-anneal-Murphy-2021.pdf - Published Version - Requires a PDF viewer.
Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0.

Download (1582Kb) | Preview
Official URL: http://dx.doi.org/10.1016/j.mssp.2020.105527

Request Changes to record.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > T Technology (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TP Chemical technology
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Silicon carbide , Silicon carbide -- Electric properties , Metal oxide semiconductor field-effect transistors, Atomic layer deposition
Journal or Publication Title: Materials Science in Semiconductor Processing
Publisher: Pergamon
ISSN: 1369-8001
Official Date: February 2021
Dates:
DateEvent
February 2021Published
26 October 2020Available
19 October 2020Accepted
Volume: 122
Article Number: 105527
DOI: 10.1016/j.mssp.2020.105527
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/P017363/1 [EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/R00448X/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us