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The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal
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Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527
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WRAP-improvement-atomic-layer-deposited-SiO2-4H-SiC-interfaces-high-temperature-forming-gas-anneal-Murphy-2021.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0. Download (1582Kb) | Preview |
Official URL: http://dx.doi.org/10.1016/j.mssp.2020.105527
| Item Type: | Journal Article | |||||||||
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| Subjects: | Q Science > QC Physics T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Silicon carbide , Silicon carbide -- Electric properties , Metal oxide semiconductor field-effect transistors, Atomic layer deposition | |||||||||
| Journal or Publication Title: | Materials Science in Semiconductor Processing | |||||||||
| Publisher: | Pergamon | |||||||||
| ISSN: | 1369-8001 | |||||||||
| Official Date: | February 2021 | |||||||||
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| Volume: | 122 | |||||||||
| Article Number: | 105527 | |||||||||
| DOI: | 10.1016/j.mssp.2020.105527 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Access rights to Published version: | Open Access | |||||||||
| RIOXX Funder/Project Grant: |
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