The Library
Retrograde p-well for 10-kV class SiC IGBTs
Tools
Tiwari, Amit K., Antoniou, Marina, Lophitis, Neophytos, Perkin, Samuel, Trajkovic, Tatjana and Udrea, Florin (2019) Retrograde p-well for 10-kV class SiC IGBTs. IEEE Transactions on Electron Devices, 66 (7). pp. 3066-3072. doi:10.1109/TED.2019.2918008 ISSN 0018-9383.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1109/TED.2019.2918008
Abstract
In this paper, we propose the use of a retrograde doping profile for the p-well for ultrahigh voltage (>10 kV) SiC IGBTs. We show that the retrograde p-well effectively addresses the punchthrough issue, whereas offering a robust control over the gate threshold voltage. Both the punchthrough elimination and the gate threshold voltage control are crucial to high-voltage vertical IGBT architectures and are determined by the limits on the doping concentration and the depth that a conventional p-well implant can have. Without any punchthrough, a 10-kV SiC IGBT consisting of retrograde p-well yields gate threshold voltages in the range of 6-7 V with a gate oxide thickness of 100 nm. Gate oxide thickness is typically restricted to 50-60 nm in SiC IGBTs if a conventional p-well with 1×10 17 cm -3 is utilized. We further show that the optimized retrograde p-well offers the most optimum switching performance. We propose that such an effective retrograde p-well, which requires low-energy shallow implants and thus key to minimize processing challenges and device development cost, is highly promising for the ultrahigh-voltage (>10 kV) SiC IGBT technology.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||
Publisher: | IEEE | ||||
ISSN: | 0018-9383 | ||||
Official Date: | 2019 | ||||
Dates: |
|
||||
Volume: | 66 | ||||
Number: | 7 | ||||
Page Range: | pp. 3066-3072 | ||||
DOI: | 10.1109/TED.2019.2918008 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |