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On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes

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Arvanitopoulos, Anastasios E., Antoniou, Marina, Perkins, Samuel, Jennings, Mike, Guadas, Manuel Belanche, Gyftakis, Konstantinos N. and Lophitis, Neophytos (2019) On the suitability of 3C-Silicon Carbide as an alternative to 4H-Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 55 (4). pp. 4080-4090. doi:10.1109/TIA.2019.2911872 ISSN 0093-9994.

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Official URL: http://dx.doi.org/10.1109/TIA.2019.2911872

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Abstract

Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to the most well-developed polytype of SiC, the 4H-SiC, should exist. It is, therefore, important to develop finite element method techniques and models for accurate device design, analysis, and comparison. It is also needed to perform an exhaustive investigation with scope to identify which family of devices, which voltage class, and for which applications this polytype is best suited. In this paper, we validate the recently developed technology computer-aided design (TCAD) material models for 3C-SiC and those of 4H-SiC with measurements on power diodes. An excellent agreement between measurements and TCAD simulations was obtained. Thereafter, based on this validation, 3C- and 4H-SiC vertical power diodes are assessed to create trade-off maps. Depending on the operation requirements imposed by the application, the developed tradeoff maps set the boundary of the realm for those two polytypes and allows to predict which applications would benefit once electrically graded 3C-SiC becomes available.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: IEEE Transactions on Industry Applications
Publisher: IEEE
ISSN: 0093-9994
Official Date: 2019
Dates:
DateEvent
2019Published
Volume: 55
Number: 4
Page Range: pp. 4080-4090
DOI: 10.1109/TIA.2019.2911872
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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