Kho Ching Tee, Elizabeth, Antoniou, Marina, Udrea, Florin, Hoelke, Alexander, Ng, Liang Yew, Bin Wan Zainal Abidin, Wan Azlan, Pilkington, Steven John and Pal, Deb Kumar (2014) Analysis on the off-state design and characterization of LIGBTs in partial SOI technology. Solid-State Electronics, 96 . pp. 38-43. doi:10.1016/j.sse.2014.04.018

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Abstract

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given.

Item Type:	Journal Article
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	Solid-State Electronics
Publisher:	Elsevier
ISSN:	0038-1101
Official Date:	2014
Dates:	Date Event 2014 Published
Volume:	96
Page Range:	pp. 38-43
DOI:	10.1016/j.sse.2014.04.018
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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