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Parameters influencing the maximum controllable current in gate commutated thyristors
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Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Nistor, Iulian, Arnold, Martin, Wikström, Tobias and Vobecky, Jan (2014) Parameters influencing the maximum controllable current in gate commutated thyristors. IET Circuits, Devices & Systems, 8 (3). pp. 221-226. doi:10.1049/iet-cds.2013.0217
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Official URL: http://dx.doi.org/10.1049/iet-cds.2013.0217
Abstract
The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p‐base thickness, its peak concentration, the depth of the p‐base and the buffer peak concentration.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Engineering | ||||
| Journal or Publication Title: | IET Circuits, Devices & Systems | ||||
| ISSN: | 1751-858X | ||||
| Official Date: | 2014 | ||||
| Dates: |
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| Volume: | 8 | ||||
| Number: | 3 | ||||
| Page Range: | pp. 221-226 | ||||
| DOI: | 10.1049/iet-cds.2013.0217 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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