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The p-ring Trench Schottky IGBT : a solution towards latch-up immunity and an enhanced safe-operating area

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Antoniou, Marina, Udrea, Florin, Lophitis, Neophytos , Corvasce, Chiara and De-Michielis, Luca (2020) The p-ring Trench Schottky IGBT : a solution towards latch-up immunity and an enhanced safe-operating area. In: 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13 Sep 2020 - 18 Sep 2020 pp. 134-137. ISBN 9781728148373. doi:10.1109/ISPSD46842.2020.9170084 ISSN 1063-6854.

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Official URL: http://dx.doi.org/10.1109/ISPSD46842.2020.9170084

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Abstract

A novel Trench IGBT design, namely the p-ring Trench Schottky IGBT, with improved latch-up immunity and an enhanced safe-operating area is proposed. This design improves the performance of the FS+ IGBT by facilitating the collection of holes through a p-doped (p-ring) buried region connected through a Schottky contact to the source/cathode contact. This unique structure approach allows the improvement in the device reliability and it is shown under numerical studies to be highly effective in expanding the safe operating area (SOA), suppress dynamic avalanche, improve the latch up robustness and have the potential to improve the device switching operation.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Publisher: IEEE
ISBN: 9781728148373
ISSN: 1063-6854
Book Title: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Official Date: 2020
Dates:
DateEvent
2020Published
18 August 2020Available
Page Range: pp. 134-137
DOI: 10.1109/ISPSD46842.2020.9170084
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Type of Event: Conference
Location of Event: Vienna, Austria
Date(s) of Event: 13 Sep 2020 - 18 Sep 2020

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