Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers : the impact of the anode layout

Tools
- Tools
+ Tools

Donato, Nazareno, Udrea, Florin, Mihaila, Andrei, Knoll, Lara, Romano, Gianpaolo, Kranz, Lukas and Antoniou, Marina (2020) Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers : the impact of the anode layout. In: 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13-18 Sep 2020 pp. 198-201. ISBN 9781728148373. doi:10.1109/ISPSD46842.2020.9170197 ISSN 1063-6854.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Official URL: http://dx.doi.org/10.1109/ISPSD46842.2020.9170197

Request Changes to record.

Abstract

Commercially available high voltage Silicon Carbide (SiC) Junction Barrier Schottky (JBS) are typically designed with advanced anode topography depending on the manufacturer and the specific current-voltage rating. The anode layout of JBS rectifiers affects a wide range of electro-thermal parameters such as the leakage current and the response of the diode to over-current events (surge current capability). In this paper, the effect of 3D anode geometries for the active area of 3.3 kV-20 A SiC JBS diodes is investigated in detail for both single and repetitive surge current events. By means of advanced 3D electro-thermal finite element simulations, a trade-off between the main factors which are contributing to the bipolar behavior activation is identified.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Publisher: IEEE
ISBN: 9781728148373
ISSN: 1063-6854
Book Title: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Official Date: 2020
Dates:
DateEvent
2020Published
18 August 2020Available
Page Range: pp. 198-201
DOI: 10.1109/ISPSD46842.2020.9170197
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Type of Event: Conference
Location of Event: Vienna, Austria
Date(s) of Event: 13-18 Sep 2020

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us