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Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers : the impact of the anode layout
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Donato, Nazareno, Udrea, Florin, Mihaila, Andrei, Knoll, Lara, Romano, Gianpaolo, Kranz, Lukas and Antoniou, Marina (2020) Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers : the impact of the anode layout. In: 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 13-18 Sep 2020 pp. 198-201. ISBN 9781728148373. ISSN 1063-6854. doi:10.1109/ISPSD46842.2020.9170197
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Official URL: http://dx.doi.org/10.1109/ISPSD46842.2020.9170197
Abstract
Commercially available high voltage Silicon Carbide (SiC) Junction Barrier Schottky (JBS) are typically designed with advanced anode topography depending on the manufacturer and the specific current-voltage rating. The anode layout of JBS rectifiers affects a wide range of electro-thermal parameters such as the leakage current and the response of the diode to over-current events (surge current capability). In this paper, the effect of 3D anode geometries for the active area of 3.3 kV-20 A SiC JBS diodes is investigated in detail for both single and repetitive surge current events. By means of advanced 3D electro-thermal finite element simulations, a trade-off between the main factors which are contributing to the bipolar behavior activation is identified.
| Item Type: | Conference Item (Paper) | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Engineering | ||||||
| Publisher: | IEEE | ||||||
| ISBN: | 9781728148373 | ||||||
| ISSN: | 1063-6854 | ||||||
| Book Title: | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) | ||||||
| Official Date: | 2020 | ||||||
| Dates: |
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| Page Range: | pp. 198-201 | ||||||
| DOI: | 10.1109/ISPSD46842.2020.9170197 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Conference Paper Type: | Paper | ||||||
| Title of Event: | 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) | ||||||
| Type of Event: | Conference | ||||||
| Location of Event: | Vienna, Austria | ||||||
| Date(s) of Event: | 13-18 Sep 2020 |
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