The Library
Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures : benefits & constraints
Tools
Tools
Tools
Tiwari, Amit K., Udrea, Florin, Lophitis, Neophytos and Antoniou, Marina (2019) Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures : benefits & constraints. In: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019 pp. 175-178. ISBN 9781728105802. doi:10.1109/ISPSD.2019.8757586 ISSN 1063-6854.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1109/ISPSD.2019.8757586
Abstract
State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from S iC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.
| Item Type: | Conference Item (Paper) | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Publisher: | IEEE | ||||||
| ISBN: | 9781728105802 | ||||||
| ISSN: | 1063-6854 | ||||||
| Book Title: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) | ||||||
| Official Date: | 2019 | ||||||
| Dates: |
|
||||||
| Page Range: | pp. 175-178 | ||||||
| DOI: | 10.1109/ISPSD.2019.8757586 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Conference Paper Type: | Paper | ||||||
| Title of Event: | 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) | ||||||
| Type of Event: | Conference | ||||||
| Location of Event: | Shanghai, China | ||||||
| Date(s) of Event: | 19-23 May 2019 |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
