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Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures : benefits & constraints

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Tiwari, Amit K., Udrea, Florin, Lophitis, Neophytos and Antoniou, Marina (2019) Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures : benefits & constraints. In: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019 pp. 175-178. ISBN 9781728105802. doi:10.1109/ISPSD.2019.8757586 ISSN 1063-6854.

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Official URL: http://dx.doi.org/10.1109/ISPSD.2019.8757586

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Abstract

State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from S iC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Publisher: IEEE
ISBN: 9781728105802
ISSN: 1063-6854
Book Title: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Official Date: 2019
Dates:
DateEvent
2019Published
11 July 2019Available
Page Range: pp. 175-178
DOI: 10.1109/ISPSD.2019.8757586
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Type of Event: Conference
Location of Event: Shanghai, China
Date(s) of Event: 19-23 May 2019

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