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Performance Improvement of >10kV SiC IGBTs with retrograde p-well

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Tiwari, Amit K., Antoniou, Marina, Lophitis, Neo, Perkins, Samuel, Trajkovic, Tatjana and Udrea, Florin (2019) Performance Improvement of >10kV SiC IGBTs with retrograde p-well. In: 12th European Conference on Silicon Carbide and Related Materials , Birmingham, United Kingdom, 02-06 Sep 2018. Published in: Materials Science Forum, 963 pp. 639-642. ISBN 9783035713329. ISSN 0255-5476. doi:10.4028/www.scientific.net/MSF.963.639

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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.9...

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Abstract

A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1μm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: Materials Science Forum
Publisher: Trans Tech Publications Ltd
ISBN: 9783035713329
ISSN: 0255-5476
Official Date: July 2019
Dates:
DateEvent
July 2019Published
Volume: 963
Page Range: pp. 639-642
DOI: 10.4028/www.scientific.net/MSF.963.639
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 12th European Conference on Silicon Carbide and Related Materials
Type of Event: Conference
Location of Event: Birmingham, United Kingdom
Date(s) of Event: 02-06 Sep 2018

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