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Performance Improvement of >10kV SiC IGBTs with retrograde p-well
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Tiwari, Amit K., Antoniou, Marina, Lophitis, Neo, Perkins, Samuel, Trajkovic, Tatjana and Udrea, Florin (2019) Performance Improvement of >10kV SiC IGBTs with retrograde p-well. In: 12th European Conference on Silicon Carbide and Related Materials , Birmingham, United Kingdom, 02-06 Sep 2018. Published in: Materials Science Forum, 963 pp. 639-642. ISBN 9783035713329. doi:10.4028/www.scientific.net/MSF.963.639 ISSN 0255-5476.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.9...
Abstract
A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1μm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Materials Science Forum | ||||
Publisher: | Trans Tech Publications Ltd | ||||
ISBN: | 9783035713329 | ||||
ISSN: | 0255-5476 | ||||
Official Date: | July 2019 | ||||
Dates: |
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Volume: | 963 | ||||
Page Range: | pp. 639-642 | ||||
DOI: | 10.4028/www.scientific.net/MSF.963.639 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 12th European Conference on Silicon Carbide and Related Materials | ||||
Type of Event: | Conference | ||||
Location of Event: | Birmingham, United Kingdom | ||||
Date(s) of Event: | 02-06 Sep 2018 |
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