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>10kV 4H-SiC n-IGBTs for elevated temperature environments
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Perkins, Samuel, Antoniou, Marina, Tiwari, Amit K., Arvanitopoulos, Anastasios, Trajkovic, T., Udrea, Florin and Lophitis, Neophytos (2018) >10kV 4H-SiC n-IGBTs for elevated temperature environments. In: The 14th International Seminar on Power Semiconductors (ISPS 2018), Prague, Czech Republic, 29 Aug 2018 - 31 Aug 2018
Research output not available from this repository, contact author.Abstract
In this work we explore the appropriate design parameters which will enable the fabrication of a >10kVn-Channel IGBT. In particular, we emphasize the reduction of device blocking capabilities for high temperature environments. Moreover, this work shows that the SiC device design optimization methodology needs to be rethought to account for the significant loss of blocking voltage at the desired elevated operating temperatures. Indeed, device design engineers aiming to optimize a SiC IGBT should design at high temperature and not at room temperature.
| Item Type: | Conference Item (UNSPECIFIED) | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Engineering | ||||
| Official Date: | August 2018 | ||||
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| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Title of Event: | The 14th International Seminar on Power Semiconductors (ISPS 2018) | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Prague, Czech Republic | ||||
| Date(s) of Event: | 29 Aug 2018 - 31 Aug 2018 | ||||
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