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Carrier transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes
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Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Lophitis, N., Jennings, M. R. and Antoniou, M. (2019) Carrier transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes. In: 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16-18 May 2018 pp. 169-173. ISBN 9781538643938. doi:10.1109/WiPDAAsia.2018.8734538
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Official URL: http://dx.doi.org/10.1109/WiPDAAsia.2018.8734538
Abstract
3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.
| Item Type: | Conference Item (Paper) | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Publisher: | IEEE | ||||||
| ISBN: | 9781538643938 | ||||||
| Book Title: | 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) | ||||||
| Official Date: | 2019 | ||||||
| Dates: |
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| Page Range: | pp. 169-173 | ||||||
| DOI: | 10.1109/WiPDAAsia.2018.8734538 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Conference Paper Type: | Paper | ||||||
| Title of Event: | 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) | ||||||
| Type of Event: | Conference | ||||||
| Location of Event: | Xi'an, China | ||||||
| Date(s) of Event: | 16-18 May 2018 |
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