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Carrier transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes

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Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Lophitis, N., Jennings, M. R. and Antoniou, M. (2019) Carrier transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes. In: 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16-18 May 2018 pp. 169-173. ISBN 9781538643938. doi:10.1109/WiPDAAsia.2018.8734538

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Official URL: http://dx.doi.org/10.1109/WiPDAAsia.2018.8734538

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Abstract

3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Publisher: IEEE
ISBN: 9781538643938
Book Title: 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Official Date: 2019
Dates:
DateEvent
2019Published
13 June 2018Available
Page Range: pp. 169-173
DOI: 10.1109/WiPDAAsia.2018.8734538
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Type of Event: Conference
Location of Event: Xi'an, China
Date(s) of Event: 16-18 May 2018

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