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Experimental demonstration of the p-ring FS+ Trench IGBT concept : a new design for minimizing the conduction losses
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Antoniou, M., Lophitis, N., Udrea, F., Bauer, F., Nistor, I., Bellini, M. and Rahimo, M. (2015) Experimental demonstration of the p-ring FS+ Trench IGBT concept : a new design for minimizing the conduction losses. In: 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China, 10-14 May 2015 pp. 21-24. ISBN 9781479962594. ISSN 1063-6854. doi:10.1109/ISPSD.2015.7123379
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Official URL: http://dx.doi.org/10.1109/ISPSD.2015.7123379
Abstract
A new IGBT type structure, namely the p-ring FS+ Trench IGBT, with improved performance has been demonstrated. The improvement has been achieved through the utilization of p doped buried layers (p-rings) which allows for the simultaneous increase in the n enhancement layer doping concentration above the conventional levels without compromising the device breakdown rating. This unique lateral charge compensation approach is demonstrated to be highly effective in lowering the on-state losses. The experimental results show a 20% reduction in the on-state losses for a 1.7kV device.
| Item Type: | Conference Item (Paper) | ||||||
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| Divisions: | Faculty of Science > Engineering | ||||||
| Publisher: | IEEE | ||||||
| ISBN: | 9781479962594 | ||||||
| ISSN: | 1063-6854 | ||||||
| Book Title: | 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) | ||||||
| Official Date: | 2015 | ||||||
| Dates: |
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| Page Range: | pp. 21-24 | ||||||
| DOI: | 10.1109/ISPSD.2015.7123379 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Conference Paper Type: | Paper | ||||||
| Title of Event: | 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) | ||||||
| Type of Event: | Conference | ||||||
| Location of Event: | Hong Kong, China | ||||||
| Date(s) of Event: | 10-14 May 2015 |
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