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Experimental demonstration of the p-ring FS+ Trench IGBT concept : a new design for minimizing the conduction losses

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Antoniou, M., Lophitis, N., Udrea, F., Bauer, F., Nistor, I., Bellini, M. and Rahimo, M. (2015) Experimental demonstration of the p-ring FS+ Trench IGBT concept : a new design for minimizing the conduction losses. In: 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China, 10-14 May 2015 pp. 21-24. ISBN 9781479962594. doi:10.1109/ISPSD.2015.7123379 ISSN 1063-6854.

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Official URL: http://dx.doi.org/10.1109/ISPSD.2015.7123379

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Abstract

A new IGBT type structure, namely the p-ring FS+ Trench IGBT, with improved performance has been demonstrated. The improvement has been achieved through the utilization of p doped buried layers (p-rings) which allows for the simultaneous increase in the n enhancement layer doping concentration above the conventional levels without compromising the device breakdown rating. This unique lateral charge compensation approach is demonstrated to be highly effective in lowering the on-state losses. The experimental results show a 20% reduction in the on-state losses for a 1.7kV device.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Publisher: IEEE
ISBN: 9781479962594
ISSN: 1063-6854
Book Title: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Official Date: 2015
Dates:
DateEvent
2015Published
15 June 2015Available
Page Range: pp. 21-24
DOI: 10.1109/ISPSD.2015.7123379
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Type of Event: Conference
Location of Event: Hong Kong, China
Date(s) of Event: 10-14 May 2015

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