Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Tools
- Tools
+ Tools

Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Rahimo, Munaf and Vobecky, Jan (2016) 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic, 12 - 16 Jun 2016 pp. 371-374. ISBN 9781467387712. doi:10.1109/ISPSD.2016.7520855 ISSN 1946-0201.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Official URL: http://dx.doi.org/10.1109/ISPSD.2016.7520855

Request Changes to record.

Abstract

The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Publisher: IEEE
ISBN: 9781467387712
ISSN: 1946-0201
Book Title: 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Official Date: 2016
Dates:
DateEvent
2016Published
Page Range: pp. 371-374
DOI: 10.1109/ISPSD.2016.7520855
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Type of Event: Conference
Location of Event: Prague, Czech Republic
Date(s) of Event: 12 - 16 Jun 2016

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us