Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Rahimo, Munaf and Vobecky, Jan (2016) 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic, 12 - 16 Jun 2016 pp. 371-374. ISBN 9781467387712. ISSN 1946-0201. doi:10.1109/ISPSD.2016.7520855

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Abstract

The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science > Engineering
Publisher:	IEEE
ISBN:	9781467387712
ISSN:	1946-0201
Book Title:	2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Official Date:	2016
Dates:	Date Event 2016 Published
Page Range:	pp. 371-374
DOI:	10.1109/ISPSD.2016.7520855
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Type of Event:	Conference
Location of Event:	Prague, Czech Republic
Date(s) of Event:	12 - 16 Jun 2016

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