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4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode
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Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Rahimo, Munaf and Vobecky, Jan (2016) 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. In: 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic, 12 - 16 Jun 2016 pp. 371-374. ISBN 9781467387712. doi:10.1109/ISPSD.2016.7520855 ISSN 1946-0201.
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Official URL: http://dx.doi.org/10.1109/ISPSD.2016.7520855
Abstract
The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.
| Item Type: | Conference Item (Paper) | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Publisher: | IEEE | ||||
| ISBN: | 9781467387712 | ||||
| ISSN: | 1946-0201 | ||||
| Book Title: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) | ||||
| Official Date: | 2016 | ||||
| Dates: |
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| Page Range: | pp. 371-374 | ||||
| DOI: | 10.1109/ISPSD.2016.7520855 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Prague, Czech Republic | ||||
| Date(s) of Event: | 12 - 16 Jun 2016 |
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