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On the models used for TCAD simulations of Diamond Schottky Barrier Diodes

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Donato, N., Antoniou, M., Napoli, E., Amaratunga, G. and Udrea, F. (2015) On the models used for TCAD simulations of Diamond Schottky Barrier Diodes. In: International Semiconductor Conference (CAS), Sinaia, Romania, 12-14 Oct 2015 pp. 223-226. ISBN 9781479988624. doi:10.1109/SMICND.2015.7355214 ISSN 1545-827X.

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Official URL: http://dx.doi.org/10.1109/SMICND.2015.7355214

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Abstract

In this paper we present a numerical analysis of Schottky Barrier Diodes (SBDs) based on CVD (Chemical Vapour Deposition) Diamond. Material and interface models suitable for TCAD (Technology Computer Aided Design) finite element simulations were implemented in the software and their validity was assessed against experimental results obtained on MIP+(Metal-Intrinsic layer-highly P doped substrate) SBDs with Al and Au as Schottky metal contacts both at room and higher temperature conditions. The paper also highlights the need to improve such TCAD models since the complex behavior of Diamond based devices is still not well captured in static and dynamic conditions. The present work also discusses the role of the Oxygen surface interface in the on state performances of the SBDs.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Publisher: IEEE
ISBN: 9781479988624
ISSN: 1545-827X
Book Title: 2015 International Semiconductor Conference (CAS)
Official Date: 2015
Dates:
DateEvent
2015Published
17 December 2015Available
Page Range: pp. 223-226
DOI: 10.1109/SMICND.2015.7355214
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: International Semiconductor Conference (CAS)
Type of Event: Conference
Location of Event: Sinaia, Romania
Date(s) of Event: 12-14 Oct 2015

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