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On the models used for TCAD simulations of Diamond Schottky Barrier Diodes
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Donato, N., Antoniou, M., Napoli, E., Amaratunga, G. and Udrea, F. (2015) On the models used for TCAD simulations of Diamond Schottky Barrier Diodes. In: International Semiconductor Conference (CAS), Sinaia, Romania, 12-14 Oct 2015 pp. 223-226. ISBN 9781479988624. doi:10.1109/SMICND.2015.7355214 ISSN 1545-827X.
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Official URL: http://dx.doi.org/10.1109/SMICND.2015.7355214
Abstract
In this paper we present a numerical analysis of Schottky Barrier Diodes (SBDs) based on CVD (Chemical Vapour Deposition) Diamond. Material and interface models suitable for TCAD (Technology Computer Aided Design) finite element simulations were implemented in the software and their validity was assessed against experimental results obtained on MIP+(Metal-Intrinsic layer-highly P doped substrate) SBDs with Al and Au as Schottky metal contacts both at room and higher temperature conditions. The paper also highlights the need to improve such TCAD models since the complex behavior of Diamond based devices is still not well captured in static and dynamic conditions. The present work also discusses the role of the Oxygen surface interface in the on state performances of the SBDs.
Item Type: | Conference Item (Paper) | ||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Publisher: | IEEE | ||||||
ISBN: | 9781479988624 | ||||||
ISSN: | 1545-827X | ||||||
Book Title: | 2015 International Semiconductor Conference (CAS) | ||||||
Official Date: | 2015 | ||||||
Dates: |
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Page Range: | pp. 223-226 | ||||||
DOI: | 10.1109/SMICND.2015.7355214 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Conference Paper Type: | Paper | ||||||
Title of Event: | International Semiconductor Conference (CAS) | ||||||
Type of Event: | Conference | ||||||
Location of Event: | Sinaia, Romania | ||||||
Date(s) of Event: | 12-14 Oct 2015 |
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