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On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well
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Tiwari, Amit K., Perkin, S., Lophitis, N., Antoniou, M., Trajkovic, T. and Udrea, F. (2019) On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. In: IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019 pp. 351-357. ISBN 9781728118338. doi:10.1109/DEMPED.2019.8864804
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Official URL: http://dx.doi.org/10.1109/DEMPED.2019.8864804
Abstract
The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-through, the retrograde is highly effective in terms of reducing the stress on the gate oxide of ultra-high voltage SiC IGBTs. We show that a 10 kV SiC IGBT comprising of the retrograde p-well exhibits a much-reduced peak electric field in the gate oxide when compared with the counterpart comprising of a conventional p-well. Using an optimized retrograde p-well with depth as shallow as 1 μm, the peak electric field in the gate oxide of a 10kV rated SiC IGBT can be reduced to below 2 MV.cm -1 , a prerequisite to achieve a high-degree of reliability in high-voltage power devices. We therefore propose that the retrograde p-well is highly promising for the development of>10kV SiC IGBTs.
| Item Type: | Conference Item (Paper) | ||||||
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| Divisions: | Faculty of Science > Engineering | ||||||
| Publisher: | IEEE | ||||||
| ISBN: | 9781728118338 | ||||||
| Book Title: | 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) | ||||||
| Official Date: | 2019 | ||||||
| Dates: |
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| Page Range: | pp. 351-357 | ||||||
| DOI: | 10.1109/DEMPED.2019.8864804 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Conference Paper Type: | Paper | ||||||
| Title of Event: | IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) | ||||||
| Type of Event: | Conference | ||||||
| Location of Event: | Toulouse, France | ||||||
| Date(s) of Event: | 27-30 Aug 2019 |
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