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On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well

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Tiwari, Amit K., Perkin, S., Lophitis, N., Antoniou, M., Trajkovic, T. and Udrea, F. (2019) On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well. In: IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019 pp. 351-357. ISBN 9781728118338. doi:10.1109/DEMPED.2019.8864804

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Official URL: http://dx.doi.org/10.1109/DEMPED.2019.8864804

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Abstract

The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-through, the retrograde is highly effective in terms of reducing the stress on the gate oxide of ultra-high voltage SiC IGBTs. We show that a 10 kV SiC IGBT comprising of the retrograde p-well exhibits a much-reduced peak electric field in the gate oxide when compared with the counterpart comprising of a conventional p-well. Using an optimized retrograde p-well with depth as shallow as 1 μm, the peak electric field in the gate oxide of a 10kV rated SiC IGBT can be reduced to below 2 MV.cm -1 , a prerequisite to achieve a high-degree of reliability in high-voltage power devices. We therefore propose that the retrograde p-well is highly promising for the development of>10kV SiC IGBTs.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Publisher: IEEE
ISBN: 9781728118338
Book Title: 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)
Official Date: 2019
Dates:
DateEvent
2019Published
14 October 2019Available
Page Range: pp. 351-357
DOI: 10.1109/DEMPED.2019.8864804
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED)
Type of Event: Conference
Location of Event: Toulouse, France
Date(s) of Event: 27-30 Aug 2019

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