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Viable 3C-SiC-on-Si MOSFET design disrupting current material technology limitations
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Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N. and Lophitis, N. (2019) Viable 3C-SiC-on-Si MOSFET design disrupting current material technology limitations. In: IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Toulouse, France, 27-30 Aug 2019 pp. 364-370. ISBN 9781728118338. doi:10.1109/DEMPED.2019.8864910
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Official URL: http://dx.doi.org/10.1109/DEMPED.2019.8864910
Abstract
The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Nonetheless, material related limitations originate from the advantageous fact that 3C-SiC can be grown on Silicon (Si) wafers. One of these major limitations is an almost negligible activation of the p-type dopants after ion implantation because the annealing has to take place at relatively low temperatures. In this paper, a novel process flow for a vertical 3C-SiC-on-Si MOSFET is presented to overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with Technology Computer Aided Design (TCAD) process and device software and a comparison is performed with the conventional SiC MOSFET design. The simulated output characteristics demonstrated a reduced on-resistance and at the same time it is shown that the blocking capability can be maintained to the same level. The promising performance of the novel design discussed in this paper is potentially the solution needed and a huge step towards the realisation of 3C-SiC-on-Si MOSFETs with commercially grated characteristics.
| Item Type: | Conference Item (Paper) | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Publisher: | IEEE | ||||||
| ISBN: | 9781728118338 | ||||||
| Book Title: | 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) | ||||||
| Official Date: | 2019 | ||||||
| Dates: |
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| Page Range: | pp. 364-370 | ||||||
| DOI: | 10.1109/DEMPED.2019.8864910 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Conference Paper Type: | Paper | ||||||
| Title of Event: | IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED) | ||||||
| Type of Event: | Conference | ||||||
| Location of Event: | Toulouse, France | ||||||
| Date(s) of Event: | 27-30 Aug 2019 |
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