Tiwari, Amit K., Antoniou, Marina, Trajkovic, Tatjana, Dai, Tian, Gammon, Peter M. and Udrea, Florin (2020) Transient performance of >10kV SiC IGBT with an optimized retrograde p-well. In: UNSPECIFIED. Published in: Materials Science Forum, 1004 pp. 917-922. ISSN 1662-9752. doi:10.4028/www.scientific.net/MSF.1004.917

Research output not available from this repository, contact author.

Request Changes to record.

Abstract

The impact of different p-well designs upon the transient performance, in particular, the turn-off losses and short-circuit capability, of a >10 kV SiC n-IGBT is assessed. We find that in addition to improved transient performance, a substantial reduction in the depth of p-well implants can be achieved, if an extensively optimized retrograde approach is utilized. A conventional p-well consisting of a uniformly doped deep implant (doping concentration of ~3×1017 cm-3 and depth of >1.5 µm) exhibits considerable turn-off switching losses without offering any short circuit capability. However, an optimized retrograde p-well consisting of a variable doping profile and depth as shallow as 0.7-0.8 µm results in much reduced turn-off losses with excellent short-circuit capability. Shallow implants are desirable to lower the development cost and processing challenges. The retrograde p-well is therefore highly promising for the development of >10 kV class of SiC IGBTs.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	Materials Science Forum
Publisher:	Trans Tech Publications, Ltd.
ISSN:	1662-9752
Official Date:	July 2020
Dates:	Date Event July 2020 Published
Volume:	1004
Page Range:	pp. 917-922
DOI:	10.4028/www.scientific.net/MSF.1004.917
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Type of Event:	Conference

Request changes or add full text files to a record

Repository staff actions (login required)

View Item