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Carrier dynamics in thin Germanium–Tin Epilayers
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Rogowicz, Ernest, Kopaczek, Jan, Kutrowska-Girzycka, Joanna, Myronov, Maksym, Kudrawiec, Robert and Syperek, Marcin (2021) Carrier dynamics in thin Germanium–Tin Epilayers. ACS Applied Electronic Materials, 3 (1). pp. 344-352. doi:10.1021/acsaelm.0c00889 ISSN 2637-6113.
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WRAP-Carrier-dynamics-thin-Germanium-Tin-epilayers-2021.pdf - Accepted Version - Requires a PDF viewer. Download (1539Kb) | Preview |
Official URL: https://doi.org/10.1021/acsaelm.0c00889
Abstract
The Si-based mid-infrared photonics is an emerging technology in which group-IV germanium–tin (Ge1–xSnx) binary alloys can play a fundamental role in the development of a Si-compatible photonic components including monolithically integrated coherent light sources and detectors, on the same Si or SOI substrate. Although the Ge1–xSnx-on-Si lasers, at low temperatures, have already been demonstrated, the knowledge of the material properties necessary for such device optimization and real-life usage is very limited. In particular, carrier relaxation kinetics, relaxation pathways, and accompanied physical mechanisms, important for the laser’s dynamics, have not been subjected to in-depth research and understanding. In this work, we present detailed spectroscopic studies on photoinjected carrier dynamics in Ge1–xSnx epilayers, as a function of Sn content (6–12%) and temperature (20–300 K), by utilizing time-resolved differential reflectivity and photoluminescence. The latter technique allowed us to track separated electron and hole dynamics with a femtosecond time resolution, while the former experiment exploited a joined electron–hole recombination. This experimental approach allowed us to identify (i) two initial electron relaxation processes after photoexcitation; (ii) radiative electron–hole recombination on below-band gap states; (iii) nonradiative carrier recombination involving the Shockley–Read–Hall mechanism; and (iv) nonradiative recombination through the surface states. The research results significantly expand the knowledge on the initial carrier relaxation dynamics in the Ge1–xSnx epitaxial material. It provides unknown up-to-date kinetic parameters of the initial stage of electron relaxation and further carrier recombination dynamics, unveils the critical role of band gap inhomogeneity for the relaxation dynamics, and highlights the role of below-band gap states that can participate in the light generation process in Ge1–xSnx epilayers.
Item Type: | Journal Article | |||||||||
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Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||
SWORD Depositor: | Library Publications Router | |||||||||
Library of Congress Subject Headings (LCSH): | Photonics, Hot carriers, Electrons, Photoluminescence | |||||||||
Journal or Publication Title: | ACS Applied Electronic Materials | |||||||||
Publisher: | American Chemical Society (ACS) | |||||||||
ISSN: | 2637-6113 | |||||||||
Official Date: | 26 January 2021 | |||||||||
Dates: |
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Volume: | 3 | |||||||||
Number: | 1 | |||||||||
Page Range: | pp. 344-352 | |||||||||
DOI: | 10.1021/acsaelm.0c00889 | |||||||||
Status: | Peer Reviewed | |||||||||
Publication Status: | Published | |||||||||
Re-use Statement: | “This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].” | |||||||||
Access rights to Published version: | Restricted or Subscription Access | |||||||||
Copyright Holders: | © 2021 American Chemical Society | |||||||||
Date of first compliant deposit: | 28 January 2021 | |||||||||
Date of first compliant Open Access: | 11 January 2022 | |||||||||
RIOXX Funder/Project Grant: |
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