UNSPECIFIED (1999) SiGe p-channel MOSFETs with tungsten gate. ELECTRONICS LETTERS, 35 (5). pp. 430-431. ISSN 0013-5194

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Abstract

A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 mu m resolution is demonstrated. Interface charge densities of MOS capacitors realised with the low pressure sputtered tungsten process are comparable with thermally evaporated aluminium gale technologies (5 X 10(10)cm(-2) and 2 X 10(11)cm(-2) for W and Al, respectively). Initial results from 1 mu m gate length SiGe p-channel MOSFETs using the tungsten-based process show devices with a transconductance of 33mS/mm and effective channel mobility of 190cm(2)/Vs.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Journal or Publication Title:	ELECTRONICS LETTERS
Publisher:	IEE-INST ELEC ENG
ISSN:	0013-5194
Date:	4 March 1999
Volume:	35
Number:	5
Number of Pages:	2
Page Range:	pp. 430-431
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/14763

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