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A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices
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Dai, Tianxiang, Zhang, L., Vavasour, Oliver J., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2021) A compact trench-assisted space-modulated JTE design for high-voltage 4H-SiC devices. IEEE Transactions on Electron Devices, 68 (3). pp. 1162-1167. doi:10.1109/TED.2020.3047348 ISSN 0018-9383.
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Official URL: http://dx.doi.org/10.1109/TED.2020.3047348
Abstract
This article proposes a compact trench-assisted space-modulated junction termination extension (TSM-JTE) design for high-voltage 4H-silicon carbide (SiC) devices. In this design, trench structures are introduced into the JTE region to effectively split the termination region into three functional zones. The proposed termination structure is cost effective in terms of the chip area it occupies; for devices rated at 10 kV, the termination structure extends the edge of the device by only 250 μm. Requiring only one implant, it is relatively cheap to fabricate, while a wide implantation dose window endures that is relatively insensitive to variations in dose that may occur during processing. The same advantages occur at 20 kV, the TSM-JTE proving to have the best tradeoff between maximum breakdown voltage and implantation window, compared with other single implant termination designs, achieving this in 500 μm of termination length. At 3.3 kV, a 110-μm TSM-JTE retains its advantages over the other JTE designs, but floating field rings are expected to consume less area, though this is not the case at the higher voltages.
Item Type: | Journal Article | ||||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
Library of Congress Subject Headings (LCSH): | Silicon carbide -- Electric properties, Electronic apparatus and appliances -- Thermal properties, Silicon carbide, Junction transistors, Electric power systems, High voltages | ||||||||
Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||||
Publisher: | IEEE | ||||||||
ISSN: | 0018-9383 | ||||||||
Official Date: | March 2021 | ||||||||
Dates: |
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Volume: | 68 | ||||||||
Number: | 3 | ||||||||
Page Range: | pp. 1162-1167 | ||||||||
DOI: | 10.1109/TED.2020.3047348 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||
Date of first compliant deposit: | 5 February 2021 | ||||||||
Date of first compliant Open Access: | 8 February 2021 | ||||||||
RIOXX Funder/Project Grant: |
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