Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si : B/SiGe/Si heterostructures
UNSPECIFIED. (1999) Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si : B/SiGe/Si heterostructures. APPLIED PHYSICS LETTERS, 74 (9). pp. 1245-1247. ISSN 0003-6951Full text not available from this repository.
Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance-voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, r(H), in the Si1-xGex two-dimensional hole gas. At 300 K, r(H) was found to be equal to 0.4 for x = 0.2 and x = 0.3. Knowing r(H), it is possible to calculate the 300 K drift mobilities in the modulation-doped structures which are found to be 400 cm(2) V-1 s(-1) at a carrier density of 3.3 X 10(11) cm(-2) for x = 0.2 and 300 cm(2) V-1 s(-1) at 6.3 X 10(11) cm(-2) for x = 0.3, factors of between 1.5 and 2.0 greater than a Si pMOS control. (C) 1999 American Institute of Physics. [S0003-6951(99)03509-3].
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Date:||1 March 1999|
|Number of Pages:||3|
|Page Range:||pp. 1245-1247|
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