UNSPECIFIED (1999) High-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms. PHYSICAL REVIEW B, 59 (7). pp. 5097-5105.

Research output not available from this repository, contact author.

Request Changes to record.

Abstract

The thickness and composition of SiGe/Si quantum wells has been studied by high-depth-resolution Rutherford backscattering (RBS) analysis. While a depth resolution at the surface of 8 nm is achieved, the degradation of resolution with depth must be taken into account for a correct analysis of the data. Fully automated analysis incorporating the depth resolution as a function of depth was performed using the simulated annealing algorithm. Bayesian inference using the Markov chain Monte Carlo method was also employed, and confidence limits on the SiGe depth profiles obtained from the RES data are established. The results obtained are used to show that the interface sharpness in SiGe/Si multilayers depends on the temperature of growth. Finally, it is shown that standard RES using a normal angle of incidence is sufficient to obtain narrow limits of confidence in the thickness and stoichiometry of single quantum wells, but not of multiple quantum wells, for which high-depth-resolution experiments are necessary. [S0163-1829(99)01107-8].

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	PHYSICAL REVIEW B
Publisher:	AMERICAN PHYSICAL SOC
ISSN:	0163-1829
Official Date:	15 February 1999
Dates:	Date Event 15 February 1999 UNSPECIFIED
Volume:	59
Number:	7
Number of Pages:	9
Page Range:	pp. 5097-5105
Publication Status:	Published

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item