Contamination issues during atomic hydrogen surfactant mediated Si MBE
UNSPECIFIED (1999) Contamination issues during atomic hydrogen surfactant mediated Si MBE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 14 (2). L1-L4. ISSN 0268-1242Full text not available from this repository.
We report an investigation into sources of contamination observed from a discharge type atomic hydrogen source during atomic hydrogen surfactant mediated growth. Secondary ion mass spectrometry (SIMS) has shown that the use of a PEN discharge cell within the source can lead to boron contamination. The concentration of boron contamination is found to depend on the hydrogen coverage and is electrically active. The alternative use of a quartz cell leads to significant oxygen contamination. The results of this study are applicable not only to the use of such sources during surfactant mediated growth but may have wide implications for their use during in situ cleaning of substrate surfaces.
|Item Type:||Journal Item|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Official Date:||February 1999|
|Number of Pages:||4|
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