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Data for Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells

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Grant, Nicholas E., Altermatt, Pietro P., Niewelt, Tim, Post, Regina, Kwapil, Wolfram, Schubert, Martin C. and Murphy, John D. (2021) Data for Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells. [Dataset]

[img] Microsoft Excel (Excel spreadsheet containing raw data)
Data behind figures_LID_Ga_PERC_2021.xlsx - Published Version
Available under License Creative Commons Attribution 4.0.

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[img] Plain Text (Readme file)
readme.txt - Published Version
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Abstract

Czochralski‐grown gallium doped silicon wafers are now a mainstream substrate for commercial passivated emitter and rear (PERC) solar cells and allow retention of established processes while offering enhanced cell stability. We have assessed the carrier lifetime potential of such Czochralski‐grown wafers in dependence of resistivity, finding effective lifetimes well into the millisecond region without any gettering or hydrogenation processing, thus demonstrating one advantage over boron doped silicon. Secondly, we monitor the stability of gallium doped PERC cells under illumination (> 3000 h in some cases) and detect anomalous behaviour. While some cells are stable, others exhibit a degradation then recovery, reminiscent of light and elevated temperature induced degradation (LeTID) observed in other silicon materials. Surprisingly, cells from one ingot exhibit LeTID‐like behaviour when annealed at 300 °C but near stability when not annealed, but, for another ingot, the opposite is observed. Moreover, a stabilisation process typically used to mitigate boron‐oxygen degradation does not influence any cells we have studied. Secondary ion mass spectrometry of the PERC cells reveals significant concentrations of unintentionally incorporated boron in some cases. Nevertheless, even in the absence of mitigating light induced degradation, Ga doped silicon is still more stable than unstabilised B doped silicon under illumination.

Item Type: Dataset
Alternative Title: Data for Gallium doped silicon for high efficiency commercial PERC solar cells
Subjects: Q Science > QD Chemistry
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TP Chemical technology
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Type of Data: Experimental data
Library of Congress Subject Headings (LCSH): Gallium, Gallium arsenide solar cells, Photovoltaic cells -- Materials, Silicon compounds
Publisher: University of Warwick, School of Engineering
Official Date: 18 February 2021
Dates:
DateEvent
18 February 2021Created
Status: Not Peer Reviewed
Publication Status: Published
Media of Output (format): .xlsx
Access rights to Published version: Open Access (Creative Commons)
Copyright Holders: University of Warwick
Description:

Data record consists of an excel spreadsheet containing the raw data and an accompanying readme file. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.

Date of first compliant deposit: 24 February 2021
Date of first compliant Open Access: 24 February 2021
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/M024911/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/J01768X/2[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/S000763/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
0324204ABundesministerium für Wirtschaft und Technologiehttp://dx.doi.org/10.13039/501100002765
0324204CBundesministerium für Wirtschaft und Technologiehttp://dx.doi.org/10.13039/501100002765
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Contributors:
ContributionNameContributor ID
DepositorMurphy, John D.55925

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