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Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells
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Grant, Nicholas E., Altermat, Pietro P., Niewelt, Tim, Post, Regina, Kwapil, Wolfram, Schubert, Martin C. and Murphy, John D. (2021) Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells. Solar RRL, 5 . 2000754. doi:10.1002/solr.202000754 ISSN 2367-198X.
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WRAP-Gallium-doped-silicon-high-efficiency-commercial-PERC-solar-cells-Murphy-2021.pdf - Accepted Version Embargoed item. Restricted access to Repository staff only - Requires a PDF viewer. Download (1378Kb) |
Official URL: https://doi.org/10.1002/solr.202000754
Abstract
Czochralski‐grown gallium‐doped silicon wafers are now a mainstream substrate for commercial passivated emitter and rear cell (PERC) devices and allow retention of established processes while offering enhanced cell stability. We have assessed the carrier lifetime potential of such Czochralski‐grown wafers in dependence of resistivity, finding effective lifetimes well into the millisecond region without any gettering or hydrogenation processing, thus demonstrating one advantage over boron‐doped silicon. Second, the stability of gallium‐doped PERC cells are monitored under illumination (>3000 h in some cases) and anomalous behavior is detected. While some cells are stable, others exhibit a degradation then recovery, reminiscent of light and elevated temperature‐induced degradation (LeTID) observed in other silicon materials. Surprisingly, cells from one ingot exhibit LeTID‐like behavior when annealed at 300 °C but near stability when not annealed, but, for another ingot, the opposite is observed. Moreover, a stabilization process typically used to mitigate boron–oxygen degradation does not influence any cells that are studied. Secondary‐ion mass spectrometry of the PERC cells reveals significant concentrations of unintentionally incorporated boron in some cases. Nevertheless, even in the absence of mitigating light‐induced degradation, Ga‐doped silicon is still more stable than unstabilized B‐doped silicon under illumination.
Item Type: | Journal Article | ||||||||||||||||||
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Alternative Title: | Gallium doped silicon for high efficiency commercial PERC solar cells | ||||||||||||||||||
Subjects: | Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||||||||
Library of Congress Subject Headings (LCSH): | Gallium , Gallium arsenide solar cells , Photovoltaic cells -- Materials, Silicon compounds | ||||||||||||||||||
Journal or Publication Title: | Solar RRL | ||||||||||||||||||
Publisher: | Wiley-VCH Verlag GmbH & Co. KGaA | ||||||||||||||||||
ISSN: | 2367-198X | ||||||||||||||||||
Official Date: | 6 April 2021 | ||||||||||||||||||
Dates: |
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Volume: | 5 | ||||||||||||||||||
Article Number: | 2000754 | ||||||||||||||||||
DOI: | 10.1002/solr.202000754 | ||||||||||||||||||
Status: | Peer Reviewed | ||||||||||||||||||
Publication Status: | Published | ||||||||||||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||||||||
Date of first compliant deposit: | 18 February 2021 | ||||||||||||||||||
Date of first compliant Open Access: | 23 March 2021 | ||||||||||||||||||
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