Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study
UNSPECIFIED (1998) Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study. PHYSICAL REVIEW B, 58 (24). pp. 16177-16185. ISSN 1098-0121Full text not available from this repository.
A quantitative estimate of the In/Ga surface concentration ratio in ultrathin (In, Ga)As strained layers, grown by molecular-beam epitaxy on a GaAs(001) substrate, is obtained using grazing incidence x-ray diffraction and diffuse-scattering measurements. The commensurate 2x3 reconstruction is interpreted as due to cation ordering in the surface unit cell, locking the surface composition at the value In2/3Ga1/3As. Incommensurate 2xn reconstructions with n<3 (n>3) are described in terms of indium-depleted (-enriched) surface layers characterized by a statistical distribution of faults in the ideal 2 x 3 atomic arrangement. Within a defined temperature range 450-490 degrees C, a unique correspondence between the incommensurability parameter n and the indium surface fraction is established on the basis of a formulation of the diffuse scattering distribution. [S0163-1829(98)04648-7].
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW B|
|Publisher:||AMER PHYSICAL SOC|
|Date:||15 December 1998|
|Number of Pages:||9|
|Page Range:||pp. 16177-16185|
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