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Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study
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UNSPECIFIED (1998) Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study. PHYSICAL REVIEW B, 58 (24). pp. 16177-16185. ISSN 1098-0121
Full text not available from this repository.Abstract
A quantitative estimate of the In/Ga surface concentration ratio in ultrathin (In, Ga)As strained layers, grown by molecular-beam epitaxy on a GaAs(001) substrate, is obtained using grazing incidence x-ray diffraction and diffuse-scattering measurements. The commensurate 2x3 reconstruction is interpreted as due to cation ordering in the surface unit cell, locking the surface composition at the value In2/3Ga1/3As. Incommensurate 2xn reconstructions with n<3 (n>3) are described in terms of indium-depleted (-enriched) surface layers characterized by a statistical distribution of faults in the ideal 2 x 3 atomic arrangement. Within a defined temperature range 450-490 degrees C, a unique correspondence between the incommensurability parameter n and the indium surface fraction is established on the basis of a formulation of the diffuse scattering distribution. [S0163-1829(98)04648-7].
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | PHYSICAL REVIEW B |
| Publisher: | AMER PHYSICAL SOC |
| ISSN: | 1098-0121 |
| Date: | 15 December 1998 |
| Volume: | 58 |
| Number: | 24 |
| Number of Pages: | 9 |
| Page Range: | pp. 16177-16185 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/14989 |
Data sourced from Thomson Reuters' Web of Knowledge
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