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Prospects and challenges of 4H-SiC thyristors in protection of HB-MMC-VSC-HVDC converters
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Shen, Chengjun, Jahdi, Saeed, Alatise, Olayiwola M., Ortiz-Gonzalez, Jose Angel , Aithal, Avinash and Mellor, Phil (2021) Prospects and challenges of 4H-SiC thyristors in protection of HB-MMC-VSC-HVDC converters. IEEE Open Journal of Power Electronics, 2 . pp. 145-154. doi:10.1109/ojpel.2021.3060942
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Official URL: https://doi.org/10.1109/ojpel.2021.3060942
Abstract
Pole-to-pole DC faults on HB-MMC-VSC-HVDC schemes impose significant risk of cascade failure on IGBT/diode pairs. Other novel topologies with fault blocking capability, i.e. AAC converters, and DC circuit breakers are not yet fully matured. Therefore, silicon thyristors are used to bypass the DC faults until AC breakers activate. However, silicon thyristors are also at risk of failure due to the capacitor voltage collapse at high junction temperatures caused due to imbalanced reverse recovery current conduction. Hence, the recovery cycles are included as part of IEC standard 62 501 HVDC type-test program. Emergence of commercial Silicon Carbide (SiC) thyristors has the potential to tackle this risk. This paper investigates such opportunities and challenges by accurately modeling the performance of thyristors at fault. It was seen that SiC thyristors with acceptable surge current and reverse blocking capability can eliminate the failure mode of silicon thyristors due to minimal recovery stored charge, resulting in an equal share of reverse voltage on all thyristors.
| Item Type: | Journal Article | ||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science > Engineering | ||||||
| SWORD Depositor: | Library Publications Router | ||||||
| Library of Congress Subject Headings (LCSH): | Thyristors, Thyristor converters , Silicon-controlled rectifiers, Silicon carbide , Electric current converters, Electric current converters -- Thermal properties, Electric power transmission -- Direct current, Power semiconductors | ||||||
| Journal or Publication Title: | IEEE Open Journal of Power Electronics | ||||||
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) | ||||||
| ISSN: | 2644-1314 | ||||||
| Official Date: | 22 February 2021 | ||||||
| Dates: |
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| Volume: | 2 | ||||||
| Page Range: | pp. 145-154 | ||||||
| DOI: | 10.1109/ojpel.2021.3060942 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Publisher Statement: | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| RIOXX Funder/Project Grant: |
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