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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications
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Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.) and Shah, V. A. (2021) Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36 (5). 055006. doi:10.1088/1361-6641/abefa1 ISSN 1361-6641.
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WRAP-Initial-investigations-MOS-interface-3C-SiC-layers-device-applications-2021.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (1834Kb) | Preview |
Official URL: https://doi.org/10.1088/1361-6641/abefa1
Abstract
This letter reports on initial investigation results on the material quality and device suitability of a homo-epitaxial 3C-SiC growth process. Atomic force microscopy surface investigations revealed root-mean square surface roughness levels of 163.21 nm, which was shown to be caused by pits (35 μm width and 450 nm depth) with a density of 1.09 × 105 cm−2 which had formed during material growth. On wider scan areas, the formation of these were seen to be caused by step bunching, revealing the need for further epitaxial process improvement. X-ray diffraction showed good average crystalline qualities with a full width of half-maximum of 160 arcseconds for the 3C-SiC (002) being lower than for the 3C-on-Si material (210 arcseconds). The analysis of C–V curves then revealed similar interface-trapped charge levels for freestanding 3C-SiC, 3C-SiC on Si and 4H-SiC, with forming gas post-deposition annealed freestanding 3C-SiC devices showing D IT levels of 3.3 × 1011 cm−2 eV−1 at E C−E T = 0.2 eV. The homo-epitaxially grown 3C-SiC material’s suitability for MOS applications could also be confirmed by leakage current measurements.
| Item Type: | Journal Article | |||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology T Technology > TS Manufactures |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| SWORD Depositor: | Library Publications Router | |||||||||
| Library of Congress Subject Headings (LCSH): | Silicon carbide , Silicon carbide -- Thermal properties, Metal oxide semiconductor field-effect transistors , Metal oxide semiconductor field-effect transistors -- Design and construction, Insulated gate bipolar transistors , Chemical vapor deposition | |||||||||
| Journal or Publication Title: | Semiconductor Science and Technology | |||||||||
| Publisher: | IOP Publishing | |||||||||
| ISSN: | 1361-6641 | |||||||||
| Official Date: | 6 April 2021 | |||||||||
| Dates: |
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| Volume: | 36 | |||||||||
| Number: | 5 | |||||||||
| Article Number: | 055006 | |||||||||
| DOI: | 10.1088/1361-6641/abefa1 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Access rights to Published version: | Open Access (Creative Commons) | |||||||||
| Copyright Holders: | © 2021 The Author(s). Published by IOP Publishing Ltd | |||||||||
| Date of first compliant deposit: | 13 April 2021 | |||||||||
| Date of first compliant Open Access: | 14 April 2021 | |||||||||
| RIOXX Funder/Project Grant: |
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