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ULTRARAM : toward the development of a III–V semiconductor, nonvolatile, Random Access Memory
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Lane, D., Hodgson, P. D., Potter, R. J., Beanland, R. and Hayne, M. (2021) ULTRARAM : toward the development of a III–V semiconductor, nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 68 (5). pp. 2271-2274. doi:10.1109/ted.2021.3064788 ISSN 1557-9646.
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ULTRARAM_Toward_the_Development_of_a_IIIV_Semiconductor_Nonvolatile_Random_Access_Memory.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (1188Kb) | Preview |
Official URL: https://doi.org/10.1109/ted.2021.3064788
Abstract
ULTRARAM is a III-V compound semiconductor memory concept that exploits quantum resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area. Prototype devices are fabricated in a 2×2 memory array formation on GaAs substrates. The devices show 0/1 state contrast from program/erase (P/E) cycles with 2.5 V pulses of 500- μs duration, a remarkable switching speed for a 20 μm gate length. Memory retention is tested for 8×10 4 s, whereby the 0/1 states show adequate contrast throughout, whilst performing 8×10 4 readout operations. Further reliability is demonstrated via program-read-erase-read endurance cycling for 106 cycles with 0/1 contrast. A half-voltage array architecture proposed in our previous work is experimentally realized, with an outstandingly small disturb rate over 10 5 half-voltage cycles.
| Item Type: | Journal Article | ||||||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||||
| SWORD Depositor: | Library Publications Router | ||||||||||||
| Library of Congress Subject Headings (LCSH): | Compound semiconductors, Nonvolatile random-access memory | ||||||||||||
| Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||||||||
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) | ||||||||||||
| ISSN: | 1557-9646 | ||||||||||||
| Official Date: | May 2021 | ||||||||||||
| Dates: |
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| Volume: | 68 | ||||||||||||
| Number: | 5 | ||||||||||||
| Page Range: | pp. 2271-2274 | ||||||||||||
| DOI: | 10.1109/ted.2021.3064788 | ||||||||||||
| Status: | Peer Reviewed | ||||||||||||
| Publication Status: | Published | ||||||||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||
| Date of first compliant deposit: | 11 March 2022 | ||||||||||||
| Date of first compliant Open Access: | 11 March 2022 | ||||||||||||
| RIOXX Funder/Project Grant: |
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| Is Part Of: | 1 |
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