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ULTRARAM : toward the development of a III–V semiconductor, nonvolatile, Random Access Memory

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Lane, D., Hodgson, P. D., Potter, R. J., Beanland, R. and Hayne, M. (2021) ULTRARAM : toward the development of a III–V semiconductor, nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 68 (5). pp. 2271-2274. doi:10.1109/ted.2021.3064788

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Official URL: https://doi.org/10.1109/ted.2021.3064788

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Abstract

ULTRARAM is a III-V compound semiconductor memory concept that exploits quantum resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area. Prototype devices are fabricated in a 2×2 memory array formation on GaAs substrates. The devices show 0/1 state contrast from program/erase (P/E) cycles with 2.5 V pulses of 500- μs duration, a remarkable switching speed for a 20 μm gate length. Memory retention is tested for 8×10 4 s, whereby the 0/1 states show adequate contrast throughout, whilst performing 8×10 4 readout operations. Further reliability is demonstrated via program-read-erase-read endurance cycling for 106 cycles with 0/1 contrast. A half-voltage array architecture proposed in our previous work is experimentally realized, with an outstandingly small disturb rate over 10 5 half-voltage cycles.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
SWORD Depositor: Library Publications Router
Library of Congress Subject Headings (LCSH): Compound semiconductors, Nonvolatile random-access memory
Journal or Publication Title: IEEE Transactions on Electron Devices
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1557-9646
Official Date: May 2021
Dates:
DateEvent
May 2021Published
25 March 2021Available
4 March 2021Accepted
Volume: 68
Number: 5
Page Range: pp. 2271-2274
DOI: 10.1109/ted.2021.3064788
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R511560/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/N509504/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
777222European Commissionhttp://dx.doi.org/10.13039/501100000780

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