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Bulk transport paths through defects in floating zone and Al flux grown SmB6
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(2021) Bulk transport paths through defects in floating zone and Al flux grown SmB6. Physical Review Materials, 5 (5). 055001. doi:10.1103/PhysRevMaterials.5.055001 ISSN 2475-9953.
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WRAP-Bulk-transport-paths-defects-floating-zone-Al-flux-grown-SmB6-2021.pdf - Published Version - Requires a PDF viewer. Download (2664Kb) | Preview |
Official URL: http://dx.doi.org/10.1103/PhysRevMaterials.5.05500...
Abstract
We investigate the roles of disorder on low-temperature transport in SmB6 crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arise from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB6.
Item Type: | Journal Article | |||||||||||||||||||||||||||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||||||||||||||||||||||||||
Library of Congress Subject Headings (LCSH): | Samarium, Fermi surfaces , Topological insulators | |||||||||||||||||||||||||||||||||
Journal or Publication Title: | Physical Review Materials | |||||||||||||||||||||||||||||||||
Publisher: | American Physical Society | |||||||||||||||||||||||||||||||||
ISSN: | 2475-9953 | |||||||||||||||||||||||||||||||||
Official Date: | 7 May 2021 | |||||||||||||||||||||||||||||||||
Dates: |
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Volume: | 5 | |||||||||||||||||||||||||||||||||
Number: | 5 | |||||||||||||||||||||||||||||||||
Article Number: | 055001 | |||||||||||||||||||||||||||||||||
DOI: | 10.1103/PhysRevMaterials.5.055001 | |||||||||||||||||||||||||||||||||
Status: | Peer Reviewed | |||||||||||||||||||||||||||||||||
Publication Status: | Published | |||||||||||||||||||||||||||||||||
Access rights to Published version: | Restricted or Subscription Access | |||||||||||||||||||||||||||||||||
Copyright Holders: | ©2021 American Physical Society | |||||||||||||||||||||||||||||||||
Date of first compliant deposit: | 17 May 2021 | |||||||||||||||||||||||||||||||||
Date of first compliant Open Access: | 17 May 2021 | |||||||||||||||||||||||||||||||||
RIOXX Funder/Project Grant: |
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Is Part Of: | 1 |
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