UNSPECIFIED (1998) Study of two-dimensional hole gas at Si/SiGe/Si inverted interface. In: XXVII International School on Physics of Semiconducting Compounds, JUN 07-12, 1998, JASZOWIEC, POLAND.

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Abstract

We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si0.8Ge0.2 quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n(s) can be controlled, in the range of (1.5-5.2) x 10(11) cm(-2). At a temperature T = 0.33 K, the Hall mobility is 4650 cm(2) V-1 s(-1) at the maximum carrier density. For lower sheet densities (n(s) < 2 x 10(11) cm(-2)) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Raas oscillation measurements we have extracted the hole effective masses m* = (0.25 --> 0.28)m(0) and the ratio of transport to quantum lifetimes alpha = (0.92 --> 0.85) for the corresponding carrier density change of n(s) = (5.2 --> 2.5) x 10(11) cm(-2). These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n(s), short range interface charge and interface roughness scattering.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Journal or Publication Title:	ACTA PHYSICA POLONICA A
Publisher:	POLISH ACAD SCIENCES INST PHYSICS
ISSN:	0587-4246
Date:	September 1998
Volume:	94
Number:	3
Number of Pages:	6
Page Range:	pp. 503-508
Publication Status:	Published
Title of Event:	XXVII International School on Physics of Semiconducting Compounds
Location of Event:	JASZOWIEC, POLAND
Date(s) of Event:	JUN 07-12, 1998
URI:	http://wrap.warwick.ac.uk/id/eprint/15246

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