Study of two-dimensional hole gas at Si/SiGe/Si inverted interface
UNSPECIFIED (1998) Study of two-dimensional hole gas at Si/SiGe/Si inverted interface. In: XXVII International School on Physics of Semiconducting Compounds, JASZOWIEC, POLAND, JUN 07-12, 1998. Published in: ACTA PHYSICA POLONICA A, 94 (3). pp. 503-508.Full text not available from this repository.
We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si0.8Ge0.2 quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n(s) can be controlled, in the range of (1.5-5.2) x 10(11) cm(-2). At a temperature T = 0.33 K, the Hall mobility is 4650 cm(2) V-1 s(-1) at the maximum carrier density. For lower sheet densities (n(s) < 2 x 10(11) cm(-2)) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Raas oscillation measurements we have extracted the hole effective masses m* = (0.25 --> 0.28)m(0) and the ratio of transport to quantum lifetimes alpha = (0.92 --> 0.85) for the corresponding carrier density change of n(s) = (5.2 --> 2.5) x 10(11) cm(-2). These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n(s), short range interface charge and interface roughness scattering.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||ACTA PHYSICA POLONICA A|
|Publisher:||POLISH ACAD SCIENCES INST PHYSICS|
|Number of Pages:||6|
|Page Range:||pp. 503-508|
|Title of Event:||XXVII International School on Physics of Semiconducting Compounds|
|Location of Event:||JASZOWIEC, POLAND|
|Date(s) of Event:||JUN 07-12, 1998|
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