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Analysis of the 1st and 3rd quadrant transients of symmetrical and asymmetrical double-trench SiC power MOSFETs
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Yang, Juefei, Jahdi, Saeed, Stark, Bernard, Alatise, Olayiwola M., Ortiz-Gonzalez, Jose Angel and Mellor, Phil (2021) Analysis of the 1st and 3rd quadrant transients of symmetrical and asymmetrical double-trench SiC power MOSFETs. IEEE Open Journal of Power Electronics, 2 . pp. 265-276. doi:10.1109/ojpel.2021.3072503 ISSN 2644-1314.
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WRAP-Analysis-1st-3rd-quadrant-transients-symmetrical-asymmetrical-double-trench-SiC-power-MOSFETs-2021.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (4Mb) | Preview |
Official URL: https://doi.org/10.1109/ojpel.2021.3072503
Abstract
In this paper, performance at 1 st and 3 rd quadrant operation of Silicon and Silicon Carbide (SiC) symmetrical and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements using compact modeling. The devices are evaluated on a high voltage clamped inductive switching test rig and switched at a range of switching rates at elevated junction temperatures. It is shown, experimentally, that in the 1 st quadrant, CoolSiC (SiC asymmetrical double-trench) MOSFET and SiC symmetrical double-trench MOSFET demonstrate more stable temperature coefficients. Silicon Superjunction MOSFETs exhibits the lowest turn-off switching rates due to the large input capacitance. The evaluated SiC Planar MOSFET also performs sub-optimally at turn-on switching due to its higher input capacitance and shows more temperature sensitivity due to its lower threshold voltage. In the 3 rd quadrant, the relatively larger reverse recovery charge of Silicon Superjunction MOSFET negatively impacts the turn-OFF transients compared with the SiC MOSFETs. It is also seen that among the SiC MOSFETs, the two double-trench MOSFET structures outperform the selected SiC planar MOSFET in terms of reverse recovery.
Item Type: | Journal Article | ||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
SWORD Depositor: | Library Publications Router | ||||||
Library of Congress Subject Headings (LCSH): | Silicon carbide -- Electric properties , Metal oxide semiconductor field-effect transistors , Metal oxide semiconductor field-effect transistors -- Electric properties, Switching circuits, Wide gap semiconductors | ||||||
Journal or Publication Title: | IEEE Open Journal of Power Electronics | ||||||
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) | ||||||
ISSN: | 2644-1314 | ||||||
Official Date: | 12 April 2021 | ||||||
Dates: |
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Volume: | 2 | ||||||
Page Range: | pp. 265-276 | ||||||
DOI: | 10.1109/ojpel.2021.3072503 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Re-use Statement: | ** From Crossref journal articles via Jisc Publications Router | ||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||
Date of first compliant deposit: | 7 February 2022 | ||||||
Date of first compliant Open Access: | 7 February 2022 | ||||||
RIOXX Funder/Project Grant: |
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