The Library
Area-selective atomic layer deposition of SiO2 using acetylacetone as a chemoselective inhibitor in an ABC-type cycle
Tools
Tools
Tools
Mameli, Alfredo, Merkx, Marc J. M., Karasulu, Bora, Roozeboom, Fred, Kessels, Wilhelmus (Erwin) M. M. and Mackus, Adriaan J. M. (2017) Area-selective atomic layer deposition of SiO2 using acetylacetone as a chemoselective inhibitor in an ABC-type cycle. ACS Nano, 11 (9). pp. 9303-9311. doi:10.1021/acsnano.7b04701 ISSN 1936-0851.
|
PDF
WRAP-area-selective-atomic-layer-deposition-SiO2-acetylacetone-chemoselective-inhibitor-Karasulu-2017.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0. Download (3610Kb) | Preview |
Official URL: http://dx.doi.org/10.1021/acsnano.7b04701
Abstract
Area-selective atomic layer deposition (ALD) is rapidly gaining interest because of its potential application in self-aligned fabrication schemes for next-generation nanoelectronics. Here, we introduce an approach for area-selective ALD that relies on the use of chemoselective inhibitor molecules in a three-step (ABC-type) ALD cycle. A process for area-selective ALD of SiO2 was developed comprising acetylacetone inhibitor (step A), bis(diethylamino)silane precursor (step B), and O2 plasma reactant (step C) pulses. Our results show that this process allows for selective deposition of SiO2 on GeO2, SiNx, SiO2, and WO3, in the presence of Al2O3, TiO2, and HfO2 surfaces. In situ Fourier transform infrared spectroscopy experiments and density functional theory calculations underline that the selectivity of the approach stems from the chemoselective adsorption of the inhibitor. The selectivity between different oxide starting surfaces and the compatibility with plasma-assisted or ozone-based ALD are distinct features of this approach. Furthermore, the approach offers the opportunity of tuning the substrate-selectivity by proper selection of inhibitor molecules.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Subjects: | Q Science > QD Chemistry T Technology > T Technology (General) T Technology > TA Engineering (General). Civil engineering (General) |
||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||||||
| Library of Congress Subject Headings (LCSH): | Atomic layer deposition , Silicon oxide , Nanomanufacturing , Density functionals , Chemical vapor deposition, Thin films | ||||||||
| Journal or Publication Title: | ACS Nano | ||||||||
| Publisher: | American Chemical Society | ||||||||
| ISSN: | 1936-0851 | ||||||||
| Official Date: | 26 September 2017 | ||||||||
| Dates: |
|
||||||||
| Volume: | 11 | ||||||||
| Number: | 9 | ||||||||
| Page Range: | pp. 9303-9311 | ||||||||
| DOI: | 10.1021/acsnano.7b04701 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||||
| Date of first compliant deposit: | 21 June 2021 | ||||||||
| Date of first compliant Open Access: | 22 June 2021 |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
