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Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization
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Baker, G. W. C., Chan, C., Renz, A. B., Qi, Yunyi, Dai, Tianxiang, Li, Fan, Shah, V. A., Mawby, P. A. (Philip A.), Antoniou, Marina and Gammon, P. M. (2021) Optimization of 1700-V 4H-SiC superjunction Schottky rectifiers with implanted p-pillars for practical realization. IEEE Transactions on Electron Devices, 68 (7). 3497 -3504. doi:10.1109/TED.2021.3083241
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WRAP-Optimization-superjunction-Schottky-implanted-p-pillars-realization-2021.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (3886Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/TED.2021.3083241
Abstract
A class of vertical 1700-V 4H-SiC superjunction (SJ) Schottky diodes have been simulated and optimized, producing results that are below the unipolar limit, while also ensuring practical and cost-effective realization. A conventional vertical SJ is obtained in T-CAD software, using an n-type drift region of 9-μm and etching trenches through this region to the substrate to leave isolated mesa structures. P-columns are then created through implantation into the trench sidewalls. The charge-balanced SJ diode maximizes the breakdown voltage (VBD) and minimizes the specific on-resistance (Ron,SP). However, a narrow implantation window would make the vertical structure hard to fabricate. Therefore, by introducing an angled trench sidewall (α ), 10° off vertical, a graded charge profile is introduced reducing VBD by 2.5% and increasing Ron,SP by 9%. However, the implantation window is widened by 20% compared with the vertical device, making the successful production of the devices more likely. To rebalance the 10° structure, a 1-μm region of increased n-type doping is introduced at the top of the n-pillar. This partially recovers the lost VBD and Ron,SP while maintaining an implantation window wider than the vertical SJ. The balance between Ron,SP and implantation window can be tuned depending on the doping of the 1-μm top region. The 10° structure can also be rebalanced by introducing a second 4-μm region of intermediate n-type doping, underneath the 1-μm surface region. This recovers Ron,SP, while maintaining an implantation window that is 7% wider.
| Item Type: | Journal Article | ||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Diodes, Schottky-barrier , Silicon carbide , Semiconductor-metal boundaries, Power semiconductors | ||||||
| Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||
| Publisher: | IEEE | ||||||
| ISSN: | 0018-9383 | ||||||
| Official Date: | July 2021 | ||||||
| Dates: |
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| Volume: | 68 | ||||||
| Number: | 7 | ||||||
| Page Range: | 3497 -3504 | ||||||
| DOI: | 10.1109/TED.2021.3083241 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Publisher Statement: | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
| Access rights to Published version: | Open Access | ||||||
| RIOXX Funder/Project Grant: |
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